350 rub
Journal Radioengineering №8 for 2019 г.
Article in number:
Design and development of complex microwave devices in SC «NPP «Almaz»
Type of article: scientific article
DOI: 10.18127/j00338486-201908(12)-02
UDC: 621.385
Authors:

M.P. Apin – Ph.D.(Econ.), First Deputy General, 

JSC «RPE «Almaz» (Saratov)

E-mail: info@almaz-rpe.ru

A.B. Danilov – Head of Departament, 

JSC «RPE «Almaz» (Saratov)

E-mail: danilovab@almaz-rpe.ru 

N.A. Kalistratov – Ph.D.(Eng.), Head of Departament, 

JSC «RPE «Almaz» (Saratov)

D.I. Kirichenko – Head of Departament, 

JSC «RPE «Almaz» (Saratov)

E-mail: KirichenkoDI@almaz-rpe.ru

S.I. Kuzyutkin – Deputy Head of Departament, 

JSC «RPE «Almaz» (Saratov)

S.A. Nefedov – Head of Departament, 

JSC «RPE «Almaz» (Saratov)

A.D. Rafalovich – Ph.D.(Eng.), Deputy Director, 

JSC «RPE «Almaz» (Saratov)

E-mail: rafalovichad@almaz-rpe.ru

V.A. Senchurov – Ph.D.(Eng.), Deputy Head of Departament, 

JSC «RPE «Almaz» (Saratov)

E-mail: senchurov_v86@mail.ru

P.D. Shalaev – Ph.D.(Eng.), Leading Research Scienntist, 

JSC «RPE «Almaz» (Saratov)

E-mail: ShalaevPD@gmail.com

Abstract:

The processes of pairing electro vacuum devices (EVP), in particular TWTs, with equipment often cause numerous problems associated with the connection of devices with power sources, input and output microwave paths and preliminary input devices, operating modes of the equipment under various operating conditions. Taking into account the requirements of interchangeability of microwave elements in the repair of electronic equipment often leads to an overestimation of the output parameters of the devices, the introduction of additional production stocks, which in turn leads to an increase in the weight and size characteristics of the devices. The desire to reduce the dimensions of products with a simultaneous improvement in performance led the developers of the EVP to the creation and production of so-called complex devices (CD). Currently, almost all manufacturers of vacuum devices, such as TWT, klystrons, produce them in the form of CD, primarily with power sources. A whole class of miniature amplifiers appeared on the TWT (MPM – Microwave Power Module), having unique specific characteristics. The article describes complex devices having been developed by SC «NPP «Almaz» over the past 50 years. One of the first complex devices developed by SC «NPP «Almaz» was amplification chains on TWT. Initially, such chains were composed of: broadband TWT with high gain, «TWT-valve» combined with phase compensator and «transparent» for microwave signal of TWT with small (6…8 dB) gain. It was this design of the amplifier that allowed for the first time to achieve a continuous power level of about 1 kW in the 1…8 GHz with an instantaneous frequency band of up to 1.5…2 octaves. Later, the dual-mode chains of powerful impulse TWTs with a single voltage were created, supplied as complex device and used in on-board radars, allowing a pulse power of 20 kW to be achieved. Besides SC «NPP «Almaz» has developed and produces wide-band microwave amplifiers of continuous action, consisting of TWT, high-voltage power supply, pre-transistor amplifier. The article presents the characteristics of some of the manufactured microwave amplifiers in the range from 1 to 40 GHz. The characteristics of other CD are also given. The main problem in the development and industrial production of CD is to ensure the reliability of all elements and CD in general.

Pages: 6-14
References
  1. Dinamika radioelektroniki. Pod obshch. red. Yu.I. Borisova. M.: Tekhnosfera. 2007. (in Russian)
  2. Gelvich E.A., Kotov A.S. Kompleksirovannye izdeliya SVCh: osnovnye osobennosti i tendentsii razvitiya. Radiotekhnika. 2004. № 2. S. 4−16. (in Russian)
  3. Bondarenko S.M., Kudryashov V.P., Kuzmin F.P., Rafalovich A.D. Shirokopolosnye spiralnye lampy begushchei volny i kompleksirovannye ustroistva.// Radiotekhnika. 2001. № 2. S. 37−45. (in Russian)
  4. Alekhin Yu.V., Apin M.P., Burtsev A.A., Bushuev N.A. i dr. Sverkhshirokopolosnye lampy begushchei volny. Issledovaniya v SVCh-, KVCh- i TGCh-diapazonakh. Vnedrenie v proizvodstvo. Pod red. N.A. Bushueva. M.: Radiotekhnika. 2015. (in Russian)
  5. Apin M.P., Bondarenko S.M., Kuzyutkin S.I., Nefedov S.A. i dr. Sovremennye impulsnye LBV proizvodstva AO «NPP «ALMAZ» i perspektivy ikh razvitiya. Materialy nauch.-tekhn. konf. «Elektronnye pribory i ustroistva SVCh», posvyashchennoi 60-letiyu AO «NPP «Almaz». Saratov: Izd-vo OOO «Nauchnaya kniga». 2017. (in Russian)
  6. Danilov A.B., Nudelman Ya.E., Rafalovich A.D. Razrabotka amlitudno- i fazoidentichnykh lamp begushchei volny. Radiotekhnika. 2002. № 2. S. 41. (in Russian)
  7. Tyazhlov B.C., Reginin D.V., Buterin A.V. Sverkhshirokopolosnyi tranzistornyi usilitel so spetsialnoi formoi amplitudno-chastotnoi kharakteristiki, prednaznachennyi dlya raboty v sostave moshchnogo vakuumno-tverdotelnogo modulya. Elektronnaya tekhnika. Ser. Elektronika SVCh. 2003. № 2 (482). S. 74−78. (in Russian)
  8. Rafalovich A.D., Kalistratov N.A., Kogan V.L., i dr. Ustoichivost raboty nepreryvnykh LBV s istochnikom pitaniya v impulsnom rezhime. XI Mezhdunar. nauchno-tekhnich. konf. «Aktualnye problemy elektronnogo priborostroeniya». 25−26 sentyabrya 2014. Saratov: SGTU imeni Gagarina Yu.A. S. 121−127. (in Russian)
  9. Smith C.R., Armstrong C.M., Duthie J. A versatile RF building block for high-power transmitters. Proceedings of the IEEE. 1999. V. 87. № 3. P. 717.
  10. Apin M.P., Bondarenko S.M., Kuzyutkin S.I., Nefedov S.A. i dr. Kompleksirovannoe radioperedayushchee ustroistvo – perspektivnoe napravlenie rabot AO «NPP «Almaz»// Materialy nauch.-tekhn. konf. «Elektronnye pribory i ustroistva SVCh», posvyashchennoi 60-letiyu AO «NPP «Almaz». Saratov: Izd-vo OOO «Nauchnaya kniga». 2017. (in Russian)
  11. Voloshkin A.V., Kosolap V.Yu. Nadezhnost – odin iz glavnykh parametrov kompleksirovannykh izdelii radioelektronnoi apparatury. Vestnik Saratovskogo gosudarstvennogo tekhnicheskogo universiteta. 2008. T. 2. № 1 (32). S. 113−119. (in Russian)
Date of receipt: 26 июля 2019 г.