E.A. Bogomolova – Leading engineer, JSC «RPC «Istok» named after Shokin» (Fryazino),

E-mail: yaea89@inbox.ru

A.V. Galdetskiy – Ph.D. in Radiophysics, Head of Department, JSC «RPC «Istok» named after Shokin» (Fryazino),  E-mail: galdetskiy@istokmw.ru

M.P. Dukhnovsky – Head of Department, JSC «RPC «Istok» named after Shokin» (Fryazino), E-mail: duhnovsky@istokmw.ru

A.K. Smirnova – Ph.D.(Eng), Head of laboratory, JSC «RPC «Istok» named after Shokin» (Fryazino),

E-mail: aksmirnova@istokmw.ru

V.A. Smirnov – Main Technologist, JSC «RPC «Istok» named after Shokin» (Fryazino),

E-mail: levberdon922@mail.ru

A.I. Korchagin – Ph.D.(Eng.), Leading Research Scientist, NIKA-Microwave, Ltd (Saratov)

E-mail: korchagin_aleksey@mail.ru

A new design of W-band TWT with slow wave structure (SWS) «meander on substrate» using suspended diamond substrates and based on available technologies (growing, precise dimensional treatment and metallization of CVD diamond wafers). Planar SWS is fabricated of two CVD diamond wafers mounted in rectangular waveguide. Wafers contain sets of slots and conductors forming meander line. Sheet electron beam is transported in channel between wafers. Considered SWS design differs from similar planar SWS by absence of «grounding» metallization on wafers, and meander is formed by galvanic deposition on surface of wafer and slots. SWS provides interaction impedance exceeding 20 Ohm in frequency band 5 GHz. For operating voltage 13 kV the SWS pitch is equal to 190 u, and channel height – 240 u. Sheet beam is focused by magnetic field 0.9 Tl. At interaction region length 24.6 mm and input power 1 W output power achieves 30 W in frequency band 5 GHz. Fabrication of SWS is based on new developed technologies of diamond trearment: thermochemical polishing (based on intensive solid phase diffusion of carbon in metal at contact of diamond with iron wafer at temperatures below eutectics); precise laser cutting; removing of graphite arising at high temperatures (above 1000°C) during laser cutting and thermochemical polishing; highly adhesive metallization using preliminary silicon ions implantation for subsequent galvanic deposition and brazing. Practical results of SWS fabrication are presented.

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