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Journal Radioengineering №6 for 2018 г.
Article in number:
Relaxation radiative processes in thin-film electroluminescent structures
Type of article: scientific article
UDC: 628.9.038
Authors:

M.K. Samokhvalov – Dr.Sc.(Phys.-Math.), Professor, Department «Electronic Instrumentation Design and Technology»,

Ulyanovsk State Technical University

E-mail: sam@ulstu.ru

Abstract:

The relaxation of the radiation brightness (brightness waves) in thin-film electroluminescent structures is studied. Based on the model of direct impact excitation of activator centers in the luminophore, the relations connecting the luminance brightness with the conditions of excitation of radiative structures are obtained. It is shown that it is possible to calculate the main parameters characterizing the processes of interaction of charge carriers accelerated by the electric field with the center of luminescence in the luminophore and photon radiation by excited atoms by measuring the brightness waves and the active current in thin-film structures. The values of activator parameters (impact excitation cross sections and constant decay time of luminescence) for various activators in zinc sulfide films doped with manganese and fluoride terbium, samarium and tullium are determined.

Pages: 103-108
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Date of receipt: 24 мая 2018 г.