A.V. Bugakova – Post-graduate Student, Department «Information Systems and Radio Engineering»,  Don State Technical University (Rostov-on-Don)

E-mail: annabugakova.1992@mail.ru

D.Yu. Denisenko – Post-graduate Student, Department «Information Systems and Radio Engineering»,  Don State Technical University (Rostov-on-Don)

E-mail: d.u.ivanova@gmail.com

E.V. Ovsepyan – Post-graduate Student, Department «Information Systems and Radio Engineering»,  Don State Technical University (Rostov-on-Don)

E-mail: ovsepyan.elenka@bk.ru

N.N. Prokopenko – Dr.Sc.(Eng.), Professor, Head of Department «Information Systems and Radio Engineering», Don State Technical University (Rostov-on-Don)

E-mail: prokopenko@sssu.ru

Features of the main methods for increasing the maximum slew rate of the output voltage (SR) of microelectronic operational amplifiers (Op-Amps) in linear and nonlinear modes are considered. It is shown that for base technological processes, the frequency of the single gain of the Op-Amp and the voltage of limiting the transmission characteristic of the capacitance capacitor driver (DCc) are two dominant and practically independent from each other factors that determine SR the many circuit-technical solutions. A comparative analysis of the SR Op-Amps on bipolar and field transistors is carried out under single-pole frequency correction. The DCc classification according to the types of nonlinearity of the pass characteristic is presented. Recommendations are formulated on the design of IP-modules of high-speed Op-Amps for systems on a chip, including working in the low temperature range and exposure to radiation.

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