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Journal Radioengineering №4 for 2017 г.
Article in number:
Study of the aspects of the use of high-power GaN transistors in microwave devices
Authors:
P.A. Tushnov - Main Technologist, PJSC «Radiofizika» (Moscow), Lecturer of Department, Moscow Aviation Institute (National Research University) V.S. Berdyev - Ph. D. (Eng.), Head of Department, PJSC «Radiofizika» (Moscow), Lecturer of Department, Moscow Institute of Physics and Technology (State University) O.A. Gevorgyan - Engineer, PJSC «Radiofizika» (Moscow)
Abstract:
The paper considers the aspects of using high-power GaN transistors in microwave devices. It is demonstrated that the studied operating modes of GaN transistors differ substantially from the optimal operating modes of GaAs transistors. The conclusions and recommended optimal operating modes of GaN transistors are confirmed by experimental results of the study of a high-power S band amplifier. In this paper we compare optimal operating modes of bipolar transistor amplifiers with operating modes of GaN amplifiers. Recommendations for optimization of the operating modes are elaborated. The paper discusses that the control of the output power level of the RTM microwave channel can be performed by changing the power supply of the amplifier over a wide range, therefore it is required to apply the technology for output power control. A special TROC software package is aimed to provide control of the RTM and APAA according to TPOC and to calibrate RTM on the basis of the output power of the microwave channels. This software package includes software for RTM, software for the APAA control unit and technological software of the automated stand for RTM calibration. The use of the TROC including circuit design, technological and software solutions gives a principally new quality - to generate a predetermined distribution of the radiated power over the APAA aperture in real time.
Pages: 33-44
References

 

  1. Oleg Kolotun. Usiliteli SVCH na osnove tekhnologijj GaN i GaAs, ehvoljucija tekhnologii Diamond FETs // Inzhenernaja mikroehlektronika. 2013. № 2. S. 72−76. (www.chipnews.com.ua).
  2. Radioperedajushhie ustrojjstva / Pod red. V.V. SHakhgildjana. M.: Radio i svjaz. 1980. 328 s.
  3. Moshhnye MDP-tranzistory i ikh primenenie v radioehlektronnykh skhemakh. Obzory po ehlektronnojj tekhnike. Ser. 2. Poluprovodnikovye pribory. 1981. № 7(799). 60 s.
  4. Usiliteli s polevymi tranzistorami / Pod red. I.P. Stepanenko. M.: Sov. radio. 1980. 192 s.
  5. Sajjt Integra. URL=http://www.integratech.com.
  6. Sajjt Sumitomo. URL=http://www.sedi.co.jp/?version=en.
  7. Sajjt Toshiba. URL=https://toshiba.semicon-storage.com/content/dam/toshiba-ss/ncsa/en_us/taec/components/d-sheet/tgi1213-50L_1_20160912_no1309.pdf.
  8. Sajjt Ma/com. URL=http://www.macom.com/products/product-detail/NPTB00050B.
  9. Vikulov I. GaN-mikroskhemy priemoperedajushhikh modulejj AFAR: evropejjskie razrabotki // EHlektronika: Nauka, Tekhnologija, Biznes. 2009. № 7. S. 90−97.
  10. Tushnov P.A., Berdyev V.S. Tekhnologii obespechenija ehffektivnosti priemoperedajushhikh modulejj AFAR, rabotajushhikh v impulsnom rezhime // Radiotekhnika. 2016. № 4. S. 29−44.
  11. Tushnov P.A., Berdyev V.S., Levitan B.A. Aspekty razvitija tekhnologijj priemo-peredajushhikh modulejj aktivnykh fazirovannykh reshetok // Radiotekhnika. 2015. № 4. S. 91−98.
  12. Tushnov P.A., Berdyev V.S. Razrabotka i issledovanie konstruktivno-tekhnologicheskikh i skhemotekhnicheskikh reshenijj dlja sozdanija ehffektivnykh modulejj AFAR SVCH diapazona // Sb. trudov «Inzhiniring i telekommunikacii» (En&T). Tezisy dokladov. 2016. S. 130−133.
  13. Tushnov P.A., Levitan B.A., Berdyev V.S. Razrabotka edinykh konstruktivnykh tekhnologicheskikh i strukturnykh reshenijj dlja sozdanija AFAR SVCH diapazona na baze vysokoehffektivnykh PPM // Sb. trudov XIV MNTK «Radiolokacija i svjaz - perspektivnye tekhnologii». M:. PAO «Radiofizika». 2016. S. 7−9.
  14. Tushnov P.A., Berdyev V.S. Tekhnologija upravlenija vykhodnojj moshhnostju priemo-peredajushhego modulja AFAR // Radiotekhnika. 2015. № 10. S. 62−74.
  15. Berdyev V.S., Levitan B.A., Tushnov P.A., SHishlov A.V. Povyshenie ehffektivnosti peredajushhikh AFAR za schet upravlenija vykhodnojj moshhnostju kanalov priemoperedajushhikh modulejj // Radiotekhnika. 2016. № 10. S. 88−99.
  16. Pat. na poleznuju model RF № 128791. Priemoperedajushhijj modul aktivnojj fazirovannojj antennojj reshetki / Berdyev V.S., Dominjuk JA.V., Levitan B.A., Molchanov E.G., Ochkov D.S., Radchenko V.P., Sudarenko A.A., Topchiev S.A., Tushnov P.A., Formalnov I.S., JArchak I.A., SHarov A.I., Tereshhenko JU.G.
  17. Pat. na izobretenie RF № 2576666. Sposob montazha moshhnogo poluprovodnikovogo ehlementa / Levitan B.A., Kuzin A.A., Topchiev S.A., Radchenko V.P., Dominjuk JA.V., Tushnov P.A., Berdyev V.S., Koljushev A.V., Mitrofanov M.M., Kostin D.JU., Astafev A.A.
  18. Pat. na izobretenie RF № 2562440. Priemoperedajushhijj modul / Dominjuk JA.V., Levitan B.A., Topchiev S.A., Tushnov P.A.
  19. Pat. na poleznuju model RF № 154186. Radioehlektronnoe ustrojjstvo / Tushnov P.A.
  20. Pat. na izobretenie RF № 2566328. SVCH-modul / Tushnov P.A.
  21. Pat. na izobretenie RF № 2566601. Priemoperedajushhijj SVCH-modul / Berdyev V.S., Dominjuk JA.V., Levitan B.A., Mitrofanov M.M., Radchenko V.P., Tokmakov D.I., Topchiev S.A., Tushnov P.A.
  22. Pat. na poleznuju model RF № 157898. Priemoperedajushhijj SVCH-modul AFAR / Tushnov P.A., Dominjuk JA.V., Berdyev V.S., Mitrofanov M.M.
  23. Pat. na izobretenie RF № 2576497. Radioehlektronnyjj SVCH-modul / Tushnov P.A.
  24. Pat. na izobretenie RF № 2584006. Usilitelnyjj blok / Tushnov P.A.
  25. Pat. na izobretenie RF № 2556863. Korpus radioehlektronnogo ustrojjstva (varianty) / Aljokhin N.N., Ampilov O.V., Berdyev V.S., Vencenoscev D.L., Dominjuk JA.V., Karimov JA.SH., Levitan B.A., Radchenko V.P., Topchiev S.A., Tushnov P.A.
  26. Pat. na poleznuju model RF № 164624. Radioehlektronnoe ustrojjstvo / Tushnov P.A. Mikhajjlova M.L.
  27. Kulikova A.I., Kuznecova A.S., Tushnov P.A. Struktura i kharakteristika modulejj AFAR dlja sistem radiosvjazi i radiolokacii // Sb. trudov XIV MNTK «Radiolokacija i svjaz - perspektivnye tekhnologii». M:. PAO «Radiofizika». 2016. S. 41−42.
  28. Tushnov P.A., Nevokshenov A.V., Kazakov A.V., Golubev A.V. Metodika otrabotki tekhnologicheskogo processa izgotovlenija SVCH-modulejj na osnove mnogoslojjnojj LTCC-struktury i aprobacija na opytnojj partii // Radiotekhnika. 2016. № 10. S. 52−63.
  29. Tushnov P.A. Tekhnologicheskaja rekonstrukcija dlja sozdanija novogo pokolenija RLS s AFAR // Tekhnologii radiolokacii. K 55-letiju PAO «Radiofizika». M.: Veche. 2015. S. 494−511.
  30. Tushnov P.A., Kostromov A.N., Borodina E.A., Kostin D.JU. Aspekty formirovanija proizvodstvennojj sistemy tekhnologicheskogo kompleksa po izgotovleniju priemoperedajushhikh modulejj AFAR // Radiotekhnika. 2016. № 10. S. 38−51.