O.V. Dvornikov - Dr. Sc. (Eng.), Professor, Main Research Scientist, PLC «Minsk Research Instrument-Making Institute». E-mail: Oleg_dvornikov@tut.by V.A. Chekhovsky - Head of Laboratory, Research Institute for Nuclear Problems of Belarusian State University (Minsk). E-mail: vtchek@hep.by V.L. Dyatlov - Junior Research Scientist, PLC «Minsk Research Instrument-Making Institute». E-mail: nitnelaff@gmail.com N.N. Prokopenko - Dr. Sc. (Eng.), Professor, Head of Department «Information Systems and Radio Engineering», Don State Technical University (Rostov-on-Don). E-mail: prokopenko@sssu.ru

The aim of the article is to consider and to carry out the field research of the new circuit solutions of the base functional nodes of the analog microelectronics - the references (R), the continuously operating voltage regulators (VR) and the temperature sensors with the current output (TS), realized on the radiation-hardened FETs and the complementary bipolar junction transistors (OJSC «Integral», Minsk). The measurement results of the test microcircuits allowed setting the main parameters of the created typical functional nodes. The output voltage of the R is 1.221 V, depending on the temperature and the supply voltage it changes for 49 µV /°C, 0.63 mV/V. The output voltage of the VR is 5.95 V and it changes for 292 µV /°C, 20 mV/V. The parameters of the temperature sensor are the following: the output current is 54.6 µA at T = 30°C, the change of the output current is 2.99 µA/°C. The absence of the created components of the thin-film and tunable resistors in the construction provides their compliance with the typical operation-routing sequences of the complementary bipolar integrated circuits production.

 

1. Prokopenko N.N., Dvornikov O.V., Krutchinskijj S.G. EHlementnaja baza radiacionno-stojjkikh informacionno-izmeritelnykh sistem. SHakhty: FGBOU VPO «JURGUEHS». 2011. 208 s.
2. Dvornikov O.V., CHekhovskijj V.A., Djatlov V.L., Sapun O.L. Proektirovanie istochnikov opornogo naprjazhenija radiacionno-stojjkikh mikroehlektronnykh sistem. CHast 2. Skhemotekhnicheskie reshenija na bipoljarnykh i polevykh tranzistorakh s r‑n-perekhodom // Materialy VIII Mezhdunar. nauchno-praktich. seminara «Problemy sovremennojj analogovojj mikroskhemotekhniki». 27−28 okt. 2011 g. SHakhty / Gl. red. N.N. Prokopenko. SHakhty: FGBOU VPO «JURGUEHS». 2011. S. 71−79.
3. Dvornikov O.V., CHekhovskijj V.A., Djatlov V.L. Proektirovanie istochnikov opornogo naprjazhenija radiacionno-stojjkikh mikroehlektronnykh sistem. CHast 1. Podgotovka k skhemotekhnicheskomu sintezu / Materialy VIII Mezhdunar. nauchno-prakticheskogo seminara «Problemy sovremennojj analogovojj mikroskhemotekhniki». 27−28 okt. 2011 g. SHakhty / Gl. red. N.N. Prokopenko. SHakhty: FGBOU VPO «JURGUEHS». 2011. S. 63−70.
4. Dvornikov O., CHekhovskijj V., Djatlov V., Prokopenko N. Osobennosti realizacii poluprovodnikovykh datchikov temperatury // Sovremennaja ehlektronika. 2014. № 3. S. 14−21.
5. Starchenko E.I. Stabilizatory naprjazhenija s kompensacionno-parametricheskimi kanalami. SHakhty: GOU VPO «JURGUEHS». 2009. 108 s.
6. Dvornikov O.V., CHekhovskijj V.A., Djatlov V.L., Bogatyrev JU.V., Lastovskijj S.B. Izmenenie parametrov komplementarnykh bipoljarnykh tranzistorov pri vozdejjstvii ionizirujushhikh izluchenijj / Voprosy atomnojj nauki i tekhniki. Ser. Fizika radiacionnogo vozdejjstvija na radioehlektronnuju apparaturu. 2015. № 3. S. 17−22.
7. Dvornikov O.V., Tchekhovski V.A., Dziatlau V.L., Prokopenko N.N.InfluenceofIonizingRadiationontheParametersofanOperationalAmplifierBasedonComplementaryBipolarTransistors / RussianMicroelectronics. 2016. V. 45. № 1. P. 54−62. DOI: 10.1134/S10 63739716010030.
8. Dvornikov O.V., Prokopenko N.N., Pakhomov I.V., Butyrlagin N.V., Bugakova A.V. Proektirovanie radiacionno-stojjkikh analogovykh processorov i preobrazovatelejj signalov datchikov na osnove bazovogo strukturnogo kristalla MH2XA010 // Radiotekhnika. 2016. № 2. S. 107−113.
9. Dvornikov O.V., Prokopenko N.N., Butyrlagin N.V., Bugakova A.V. Perspektivy primenenija novykh mikroskhem bazovogo matrichnogo i bazovogo strukturnogo kristallov v datchikovykh sistemakh // Trudy SPIIRAN-2016. № 2(45). S. 157−171.
10. Dvornikov O.V., CHekhovskijj V.A., Djatlov V.L., Bogatyrev JU.V., Lastovskijj S.B. Vlijanie gamma-izluchenija na ehlementy analogovykh integralnykh skhem // Doklady BGUIR. 2012. № 3 (65). S. 56−62.
11. Dvornikov O.V., CHekhovskijj V.A., Djatlov V.L., Bogatyrev JU.V., Lastovskijj S.B. Vlijanie bystrykh ehlektronov na analogovye integralnye ehlementy i skhemy // Voprosy atomnojj nauki i tekhniki. Ser. Fizika radiacionnogo vozdejjstvija na radioehlektronnuju apparaturu. 2012. № 3. S. 54−59.
12. Abramov I.I., Dvornikov O.V. Proektirovanie analogovykh mikroskhem dlja precizionnykh izmeritelnykh sistem. Minsk: Akad. upr. pri Prezidente Resp. Belarus. 2006. 286 s.
13. Patent RF № 2480899. Istochnik opornogo naprjazhenija / Starchenko E.I., Kuznecov P.S., Opub. 27.04.2013
14. Soklof S. Analogovye integralnye skhemy / Per. s angl. M.: Mir. 1988. 583 s.