I.V. Sivchek - Post-graduate Student, Assistant, Department «Radioengineering and Telecommunications», Peter The Great St.Petersburg Polytechnic University. E-mail: cotgreat@gmail.com V.A. Sorotsky - Dr. Sc. (Eng.), Associate Professor, Head of Department «Radioengineering and Telecommunications», Peter The Great St.Petersburg Polytechnic University. E-mail: sorotsky@mail.spbstu.ru M.N. Tolubaev - Student, Peter The Great St.Petersburg Polytechnic University. E-mail: kazimir2336415@yandex.ru

The paper considers two variants of the H bridge class DE amplifier with additional key which differ by the method of shunt capacitance connection. The mathematical model of amplifier mode and a method of calculation of its parameters is included. The results of the PSPICE simulation of the circuits taking into account the parasitic parameters are represented. The comparison of their characteristics with the characteristics of class D amplifier is carried out. Recommendations for the use of the most promising of the variants are considered. The proposals on possible direction of future research are represented.

 

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