E.I. Gol\'dman - Ph. D. (Phys.-Math.), Leading Research Scientist, Kotel\'nikov FIRE of RAS (Fryazino). E-mail: gvc@ms.ire.rssi.ru Yu.V. Gulyaev - Academic of RAS, Scientific Adviser, Kotel\'nikov IRE of RAS (Moscow). E-mail: gulyaev@cplire.ru G.V. Chucheva - Dr. Sc. (Phys.-Math.), Scientific Secretary, Kotel\'nikov FIRE of RAS (Fryazino). E-mail: gvc@ms.ire.rssi.ru

The analyze of real insulating properties of an ultrathin silicon oxide is submitted based on results previously obtained by authors concerning structures n+ Si-SiO2-n Si with a oxide thickness of 37 Å. It is shown, that the potential relief in an ultrathin SiO2 is not described by a rectangular model. It is characterized by relatively thick, ~10 Å, layers with a reduced value of the potential, separating Si from the actual barriers to electron tunneling. It is noted, that the effective barrier height of ultrathin insulating SiO2 layers is much smaller, and tunneling electron mass is much larger than, that by bulk dielectrics. It is indicated, that structures of the metal-oxide semiconductor with an ultrathin oxide are much more «malleable» field and thermal stresses compared to samples with a thick insulating layer: objects with an ultrathin oxide easily are damaged by external influences, but quickly restored to its original state at the room temperature.

 

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