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Journal Radioengineering №6 for 2015 г.
Article in number:
The impact of thermal inertance on transistor oscillator noise characteristics
Authors:
A.V. Kononov - Ph. D. (Eng.). E-mail: UnCordel@yandex.ru
Abstract:
The impact of inertial thermal feedback, which occurs owing to transistor electrophysical parameters temperature dependence, on transistor oscillator with self-bias noise characteristics is theoretically analyzed. The main attention focuses on the single-circuit quasi-harmonic signal oscillators using bipolar junction transistors. The oscillator CAD model is based on the system of Evtyanov-s symbolic shortened differential equations in a fixed-frequency approximation. Conditions for appearing of the device-s sharp amplitude and phase noise degradation caused by temperature dynamics are revealed.
Pages: 102-106
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