A.L. Khvalin - Dr. Sc. (Eng.), Professor, Saratov State University named after N.G. Chernyshevsky. E-mail: Khvalin63@mail.ru A.V. Vorobiev - Engineer, NIKA-Microwave, Ltd (Saratov). E-mail: alexvorxx@mail.ru

The article presents an approach to designing UHF power amplifier with improved parameters (in comparison to analogs) based on the solutions of the problems of structural and parametric optimization. Such devices are used in virtually all radio systems and complexes. Structural synthesis of the amplifier design consists in involving the required matching elements into a basic amplifier circuit. As an active element, a bipolar transistor BFR90 (Vishay Semiconductors) is chosen. Simulations were performed basing on the equivalent circuit of Gummel-Pune. Parametric synthesis is associated with solving the optimization problem and is reduced to the obtaining the maximum value of the gain, the minimum value of the voltage standing wave ratio (VSWR) of the input and output over the operating frequency range. As variable parameters, nominal values of capacitances, inductances and resistances used in the amplifier circuit are taken. The article presents the amplifier circuit. A comparison of the main performances of the developed amplifier with known analogs is carried out. The comparison results allows us make a conclusion that basing on solving the structural and parametric optimization problems it is possible to create UHF amplifier with parameters that are not inferior to domestic and foreign analogs. Simulation of UHF amplifier was performed with the help of CAD Microwave Office. Basing on the model of the transistor BFR90, the computer design of the amplifier is built and its optimum performances are calculated: the gain from 30 to 31 dB, and input and output VSWR not more than 1.5.

 

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