A.V. Kononov

This paper focuses on the efficient transistor oscillator steady-state regime stability margin increase method proposed by author. This method is based on the use of correction in oscillator self-bias circuit. The oscillator CAD model is based on the system of Evtyanov-s symbolic shortened differential equations. Specific feature of this model is an accounting of intrinsic thermal feedback impact, which occurs owing to transistor electrophysical parameters temperature dependence. The oscillator steady-state regime stability analysis is based on the Routh-Hurwitz algebraic criterion. The suppression feature of oscillation self-modulation caused by excessive self-bias circuit inertance impact is experimentally proved by the proposed correction modification.