R.A. Torgashov – Research Trainee,
Saratov Branch of Kotelnikov Institute of Radio Engineering and Electronics;
Post-graduate student, Saratov State University n.a. N.G. Chernyshevskii
E-mail: torgashovra@gmail.com
G.V. Torgashov – Ph.D. (Phys.-Math.), Leading Research Scientist,
Saratov Branch of Kotelnikov Institute of Radio Engineering and Electronics
N.M. Ryskin – Dr.Sc. (Phys.-Math.), Professor, Head of Laboratory,
Saratov Branch of Kotelnikov Institute of Radio Engineering and Electronics
A.G. Rozhnev – Ph.D. (Phys.-Math.), Senior Research Scientist,
Saratov Branch of Kotelnikov Institute of Radio Engineering and Electronics
Problem formulation. To improve output characteristics of modern microwave vacuum amplifiers and oscillators using of spatially developed electrodynamics structures and high-aspect-ratio electron beams or multiple beams system are very promising. Goal. To develop and study of new slow-wave structure (SWS) for powerful (>100 W) millimeter-band traveling-wave tube with multiple sheet electron beam with high interaction impedance and good heating removing property.
Result. The new two-beam meander line SWS for powerful millimeter band TWT is presented. Study of characteristics of SWS is carried out and it shows high interaction impedance values are possible in such system. The construction is designed and analysis of output characteristics of TWT is carried out, Output power can reach values up to 250 W.
Practical meaning. The development of new medium and high-power miniature sources of the short-wavelength range is a promising task of modern vacuum microwave electronics. Such devices can find application in a number of tasks, in particular in modern high-data-rate wireless communication systems.
- Patent RU 183912 U1. 2018. Slowing system for a traveling wave lamp. Torgashov G.V., Ryskin N.M., Shalaev P.D.
- Torgashov G.V., Torgashov R.A., Titov V.N., Rozhnev A.G., Ryskin N.M. Meander-line slow-wave structure for high-power millimeter-band traveling-wave tubes with multiple sheet electron beam. IEEE Electron Device Lett. 2019. V. 40. № 11. DOI 10.1109/LED.2019.2945502.