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Journal Nonlinear World №2 for 2015 г.
Article in number:
Low-temperature conductivity of Si(111)-(7x7) surface
Keywords: Si(111)-(7x7) NIS transition hopping transport electronic correlation Efros-Shklovskii law Coulomb gap
Authors:
A.A. Mayzlakh - Student, Moscow Institute of Physics and Technology, Engineer, Kotelnikov IRE RAS. E-mail: mayzlah@cplire.ru S.V. Zaitsev-Zotov - Dr.Sc. (Phys.-Math.), Head of Laboratory, Kotelnikov IRE RAS
Abstract:
Conductivity of Si(111)-(7x7) surface reconstruction was studied in temperature range 10-320 K. Measurements were provided with the two-probe method. Our results demonstrate that conductivity dependence is represented with Efros-Shklovskii law with EES = 0,55 eV.
Pages: 23-25
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