D.V. Zhuravskij - Head of the Laboratory of Electronic and Probe Microscopy, SEC «Nanotechnology», Tyumen State University. E-mail: d.zhuravskij@gmail.com A.N. Bobylev - Post-graduate Student, Department of Mechanics of Multiphase Systems, Tyumen State University; Researcher, SEC «Nanotechnology», Tyumen State University. E-mail: andreaubobylev@gmail.com S.Yu. Udovichenko - Dr.Sc. (Phys.-Math.), Department of Micro and Nanotechnology, Head of SEC «Nanotechnology», Tyumen State University. E-mail: udotgu@mail.ru V.A. Filippov - Ph.D. (Sociology), Head of the Russian Center for Advanced Studies «Artificial Cognitive Systems» (Tyumen). E-mail: filippov-vadim@yandex.ru

Research in field of solid-state neuromorphic electronics considered in the article. The authors of the article are employees of REC «Nanotechnology» of TSU Zhuravskij D.V., Bobylev A.N., Udovichenko S.Y. and head of the Russian Center for Advanced Studies «Artificial Cognitive Systems» Filippov V.A. The article is entitled «The similarity of synapse properties and properties of memristor used in an electronic device establishing». The article is devoted to analysis of properties of organic synapse in terms of reproduction of its usable properties in solid-state electronic device called memristor. The article is a compilation of analysis of the properties of synapses, the problems of obtaining memristor with desired properties, methods to address these problems and analysis of the experimental results. The paper consists of four parts. In the introduction, definitions of the memristor and its basic properties as part of neuromorphic structure are given; justified the application of memristor. The second part presents the main properties of living synapse, assesses their practical value in terms of computations. The third part deals with the electrical properties of the memristor, the problems arising in its production, ways to resolve them; the experiment of obtaining multilayer thin-film structures memristor-based mixed metal oxide Al:TiO2 and its results are described, as well as the results of measuring the current-voltage characteristics of the structures. Noted the presence of non-linearity of CVCs, the presence in it of hysteresis and depending of its type on the time characteristics of the input signal. The fourth part of the article summarizes the results obtained and the analysis of the similarities of properties of memristor and synapses; just listed first discovered effects. To confirm the initial assumptions and conclusions, the authors refer to the world experience in the fields of solid-state physics, neurophysiology nanoelectronics and results of laboratory experiments. In conclusion, properties of living synapses reproduced in solid elements are specified. The possibility of the use of the memristor as summing element of artificial neuron.

 

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