D.O. Petrova - Post-graduate Student, Kaluga Tsiolkovski State University K.G. Nikiforov - Dr. Sc. (Phys.-Math.), Professor, Kaluga Tsiolkovski State University. Е-mail: kgn@kspu.kaluga.ru

Computer simulation was carried out on the basis of the tested system of computer mathematics Mathcad. The model of spin-polarized transport was developed using the potential barrier of the tunnel thickness as spin filter generated by a ferromagnetic nanolayer. Simulations of the density of spin polarized tunneling currents in p-La_0,67Ca_0,33MnO₃ /n-SrZrO₃ structure were carried out in the ferromagnetic phase (250 K) for the range of the ferromagnetic barrier layer thickness d = 2-50 nm and applied electric field E = 10⁷?2∙10⁸ V/m. The polarization by spin of the tunnel current is close to 100% and can be explained by the fact that the exchange splitting of the conductivity band of ferromagnetic semiconductor provides various energy barriers φ_B for the tunneling electrons of different spin orientation. It was shown that for the field and potential barrier thickness such that Ed > φ_B the "effective" tunneling distance is less than the barrier d thickness. Our simulation results demonstrate that it is possible to use this nanostructure as an effective spin filter.

 

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