A.S. Elshin - Trainee researcher, Moscow State Technical University of Radio Engineering, Electronics and Automation. E-mail: elshin_andrew@mail.ru N.Yu. Firsova - Trainee researcher, Moscow State Technical University of Radio Engineering, Electronics and Automation. E-mail: natfirsova@gmail.com E.D. Mishina - Dr. Sc. (Phys.-Math.), Professor, Moscow State Technical University of Radio Engineering, Electronics and Automation. E-mail: mishi-na_elena57@mail.ru O.M. Zhigalina - Тainee researcher, Shubnikiv Institut of crystallograhy Russian Academy of Sciences (ICRAS). E-mail: zhigal@ns.crys.ras.ru D.A. Abdullaev Trainee researcher, Moscow State Technical University of Radio Engineering, Electronics and Automation D.A. Kiselev - Ph. D. (Phys.-Math.), MISA National University of Science and Technology (Moscow)

The paper presents the study of crystallization of ferroelectric microstructures by thermal heating of femtosecond laser radiation. PZT amorphous thin films on a platinized substrate were used as precursor. Due to the in-situ monitoring method used, which is based on the detection of changing the optical second harmonic (SH) signal, it was managed to monitor the process of crystallization and to find the optimal process parameters. After annealing the resulting microstructure were investigated by optical microscopy, electron microscopy, piezo-force microscopy. These techniques gave information on the size of the structures, distribution of the ferroelectric phase, grain size, the coefficient of the nonlinear susceptibility. Comparing the nonlinear optical and piezo-force images shows that the nonlinear optical distribution also shows ferroelectric phase despite the fact that in addition to the second harmonic radiation the other radiation at other wavelengths not associated with SH effect may be generated. Modeling of temperature distribution allowed to evaluate maximum temperature.

 

1. Vorotilov K.A., Sigov A.S., Romanov A.A., Mashevich P.R. Formirovanie segnetoehlektricheskikh nanostruktur dlja novogo pokolenija ustrojjstv mikro- i nanoehlektroniki // Nanomaterialy i nanostruktury. 2010. № 1. S. 45−53.
2. Kim J.K., Kim J‑H., Kim J. Effects of Annealing Sequences on Ferroelectric Properties of Nb-Doped Bismuth Titanate Thin Films // Journal of the Korean Physical Society. 2003. V. 42. R. 1130−1133.
3. Li Ai‑D., Wu D., Ling H‑Q., Wang M., Liu Z., Ming N. Different growth behavior of SrBi2Ta2O9 ferroelectric films under conventional and rapid annealing processing by metalorganic decomposition // Journal of Crystal Growth. 2002. V. 235. № 1−4. R. 394−400.
4. Zai M.H.M., Akiba A., Goto H., Matsumoto M., Yeatman E.M. Highly (111) oriented lead zirconatetitanate thin films deposited using a non-polymeric route // Thin Solid Films. 2001. V. 394. № 1−2. R. 96−100.
5. Wang Z., Chen Y., Otsuka Y., Zhu M., Cao Z., Kokawa H. Crystallization of ferroelectric lead zirconatetitanate thin films by microwave annealing at low temperatures // Journal of the American Ceramic Society. 2011. V. 94.№ 2. R. 404−409.
6. Vorotilov K.A., ZHigalina O.M., Vasilev V.A., Sigov A.S. Osobennosti formirovanija kristallicheskojj struktury cirkonata-titanata svinca v sistemakh Si−SiO2−Ti(TiO2)−Pt−Pb(ZrxTi1−x)O3// Fizika tverdogo tela. 2009.T. 51. № 7.
7. Zhu Y., Zhu J., Song Y.J., Desu S.B. Laser-assisted low temperature processing of Pb(Zr,Ti)O3 thin film // Applied Physics Letters. 1998. V. 73. № 14. R. 1958−1960.
8. Choi C.H., Lee J., Park B.H., Noh T.W. Asymmetric switching and imprint in (La,Sr)CoO3 / Pb(Zr,Ti)O3 / (La,Sr)CoO3 heterostructures // Integrated Ferroelectrics. 1997. V. 18. R. 39−48.
9. Grossmann M., Lohse O., Scheller T., Bolten D., Boettger U., Contreras J.R., Kohlstedt H., Waser R. Imprint in ferroelectric Pb(Zr,Ti)O3 thin films with thin SrRuO3 layers at the electrodes // Integrated Ferroelectrics. 2001. V. 37. R. 205−214.
10. Maiwa H., Ichinose N., Okazaki K. Preparation and properties of Ru and RuO2 thin film electrodes for ferroelectric thin films // Jpn. J. Appl.Phys. 1994. V. 33. R. 5223−5226.
11. Pan H.C., Chou C.‑C., Tsai H.‑L. Low-temperature processing of sol-gel derived La0,5Sr0,5MnO3 buffer electrode and PbZr0,52Ti0,48O3 films using CO2 laser annealing // Appl. Phys. Lett. 2003. V. 83. R. 3156−3158.
12. Wang Y.‑C., Ahn H., Chuang C.‑H., Ku Y.‑P., Pan C.‑L. Grain-size-related transient terahertz mobility of femtosecond-laser-annealed polycrystalline silicon // ApplPhys B. Lasers and Optics. 2009. V. 97. R. 181−185.
13. Wang Y.‑Ch., Shieh J.‑M., Zan H.‑W., Pan C.‑L. Near-infrared femtosecond laser crystallized poly-Si thin film transistors // Optics Express. 2007. V. 15. R. 6982−6987.
14. Nayak B.K., Gupta M.C. Femtosecond-laser-induced-crystallization and simultaneous formation of light trapping microstructures in thin a-Si:H films // Appl. Phys. A. Materials Science & Processing. 2007. V. 89. R. 663−666.
15. Firsova N.Yu., Mishina E.D., Sigov A.S., Senkevich S.V., Pronin I.P., Kholkin A., Bdikin I., Yuzyuk Yu.I. Femtosecond Infrared Laser Annealing of PZT Films on a Metal Substrate, Ferroelectrics. 2012. V. 433. № 1. R. 164−169.
16. Pronin I.P., Kaptelov E.JU., Senkevich S.V., Klimov V.A., Zajjceva N.V., SHaplygina T.A., Pronin V.P., Kukushkin S.A. Osobennosti kristallizacii polikristallicheskikh tonkikh plenok PZT, sformirovannykh na podlozhke Si/SiO2/Pt Osobennosti kristallizacii polikristallicheskikh tonkikh plenok PZT, sformirovannykhna podlozhke Si/SiO2/Pt // Fizika tverdogo tela. 2010. T. 52. № 1. S. 124−128.
17. Firsova N.JU., Elshin A.S., Marchenkova M.A., Bolotov A., Ivanovidr M.S. Perekljuchaemost perovskitnykh mikrooblastejj plenok CTS, lokalno otozhzhennykh femtosekundnym lazerom infrakrasnogo diapazona // Nano- i mikrosistemnaja tekhnika. 2014. T. 7. S. 43−47.