O.M. Zhigalina, D.N. Khmelenin, N.M. Kotova, J.A. Shestakova, K.A. Vorotilov, A.S. Sigov. N.B. Dyakonova

PLZT thin films Pb (1-x) Laх (Zr0.48 Ti0.52), where x = 0,02, 0, 05, and 0.08 with15 mol.% PbO excess (to compensate the loss during high temperature annealing) obtained by chemical solution deposition were investigated by transmission electron microscopy and X-ray analysis. Films were deposited on the substrate Si-SiO2-TiO2-Pt and annealed at T = 650 ºC to form the crystalline state. It is shown that La doping in a amount of 2 mol.% does not change the phase composition of the films annealed at T = 650 ºC. With increasing content of La to 5mol.% it was observed a pyrochlore phase, a tendency to grain refinement of a perovskite phase and weakening of the {100} perovskite orientation. At a 8 mol.% La concentration a pyrochlore phase volume increased significantly, despite of a rather high temperature annealing. Thus, the doping of La increases the temperature of the pyrochlore-perovskite transformation compared with PZT films, which should be considered for choice of the optimal temperature of crystallization.