350 rub
Journal №2 for 2011 г.
Article in number:
Magnetoelectric memory cell using multiferroic nanostructures and magnetoelastic switching
Keywords: memory cell giant magnetostriction maghetoelectric effect multiferroid nanostructures
Authors:
N. Tiercelin - V.A. Kotelnikov Institute of Radioengineering and Electronics, 125009 Moscow, Russia. E-mail: nicolas.tiercelin@iemn.univ-lille1.fr
Y. Dusch - IEMN, UMR CNRS 8520, PRES Lille Nord de France, ECLille, 59651 Villeneuve d-Ascq, France. E-mail: yannick.dusch@centraliens-lille.org
V. Preobrazhensky - IEMN, UMR CNRS 8520, PRES Lille Nord de France, ECLille, 59651 Villeneuve d-Ascq, France. E-mail: yannick.dusch@centraliens-lille.org; Wave Research Center, GPI RAS, 38 Vavilov str., Moscow, 119991, Russia
P. Pernod - IEMN, UMR CNRS 8520, PRES Lille Nord de France, ECLille, 59651 Villeneuve d-Ascq, France. E-mail: yannick.dusch@centraliens-lille.org
Abstract:
We present here a concept of a memory cell called MELRAM based on a magnetic element with giant magnetostriction, embedded in a piezoelectric matrix. Two equilibrium orientations of magnetization are defined by combining uniaxial anisotropy together with a magnetic polarization in the hard axis direction. Using the piezoelectric (PZT) matrix, an anisotropic stress is created onto the magnetic element when applying a voltage across electrodes. Thanks to the inverse magnetostrictive effect, the effective anisotropy of the magnetic element is controlled by the applied voltage and used to switch magnetization from one state to the other. Micromagnetic simulations show the effect of applied stress on magnetization and theoretical feasibility of the device. Retrieval of information can be non-destructively made by GMR reading. Details of the principle, simulations and performance perspectives are discussed
Pages: 16-20
References
  1. Kryder M.H. and Kim C.S. // IEEE Transactions on Magnetics. 45, 3406 (Oct. 2009).
  2. Weiler M., Brandlmaier A., Geprags S., Althammer M., Opel M., Bihler C., Huebl H., Brandt M.S., Gross R., and Goennenwein S.T.B. // New Journal of Physics. 11. 013021 (2009).
  3. Hu J.-M. and Nan C. W. // Phys. Rev. B 80. 224416 (Dec. 2009).
  4. Gall H. Le, BenYoussef J., Tiercelin N., Pernod P., Preobrazhensky V., and Ostorero J. Magnetics // IEEE Transactions on, Magnetics. IEEE Transactions on DOI  10.1109/20.908746 36, 3223 (2000).
  5. LeGall H., BenYoussef J., Socha F., Tiercelin N., Preobrazhensky V., and Pernod P. // J. Appl. Phys., J. Appl. Phys. 87, 5783 (2000).
  6. Gall H. Le, BenYoussef J., Tiercelin N., Preobrazhsensky V., Pernod P., and Ostorero J. Magnetics // IEEE Transactions on, Magnetics, IEEE Transactions on DOI  10.1109/20.951279 37, 2699 (2001).
  7. LeGall H., BenYoussef J., Tiercelin N., Preobrazhensky V., and Pernod P. // Journal of the Magnetics Society of Japan. 25, 258 (2001).
  8. Tiercelin N., BenYoussef J., Preobrazhensky V., Pernod P., and Gall H. L. // Journal of Magnetism and Magnetic Materials. 249. 519 (Sep. 2002).
  9. BenYoussef J., Tiercelin N., Petit F., LeGall H., Preobrazhen-sky V., and Pernod P. // In Magnetics Conference. 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International (2002) p. AS5.
  10. Tiercelin N., Preobrazhensky V., Pernod P., Masson S., BenYoussef J., and Gall H. Le. // Manique & Industries 4. 169 (May 2003).
  11. Tiercelin N., Preobrazhensky V., Pernod P., and Ostaschenko A. // Appl. Phys. Lett. 92. 062904 (Feb. 2008)
  12. Tiercelin N., Talbi A., Preobrazhensky V., Pernod P., Mortet V., Haenen K., and Soltani A. // Appl. Phys. Lett. 93, 162902 (Oct.2008). Selected for the 2008 november issue of the Virtual Journal of Nanoscale Science & Technology.
  13. Tiercelin N., Preobrazhensky V., Mortet V., Talbi A., Soltani A., Haenen K., and Pernod P. // Selected papers from the Symposium F «Multiferroics and Magnetoelectrics Materials» of the E-MRS Conference, Journal of Magnetism and Magnetic Materials 321, 1803 (Jun. 2009)
  14. BenYoussef J., Tiercelin N., Petit F., Le Gall H., Preobrazhensky V., and Pernod P. // Magnetics, IEEE Transac-tions on, Magnetics. IEEE Transactions on 38. 2817 (2002).
  15. Dusch Y., Tiercelin N., Klimov A., Rudenko V., Ignatov Y., Hage-Ali S., Pernod P., and Preobrazhensky V. // Journal of Applied Physics. (2011), submitted.
  16. Scholz W., Fidler J., Schrefl T., Suess D., Dittrich R., Forster H., and Tsiantos V. // Proceedings of the Symposium on Software Development for Process and Materials Design, Computational Materials Science. 28. 366 (Oct. 2003).
  17. Lahmani M., Dupas C., and Houdy P. // Les Nanosciences: Tome 1., Nanotechnologies et Nanophysique. (2004).
  18. Tiercelin N., Dusch Y., Preobrazhensky V., and Pernod P. // «Mémoire magnétoélectrique». Dépot de brevet No FR 10/02580.