K.A. VOROTILOV, O.M. ZHIGALINA, D.S. SEREGIN

Processes of fine crystalline structure formation in PZT-Pt-TiO2-SiO2-Si heterostructures prepared by sol-gel techniques at different annealing temperatures of ferroelectric PZT layer are considered. It is shown, that creation of perovskite phase starts at annealing temperature T=550 oC and proceeds mainly heterogeneously at the platinum (111) interface accompanying by creation of perovskite (111) grains. But this temperature is not sufficient for creation of perovskite grains into the whole film volume; as a result structures do not demonstrate typical dielectric hysteresis. Formation of column structure with PZT ferroelectric properties is completed at T = 600 C. Further increase of annealing temperature leads to a raise of grain size, disappearance of pyrochlore nanocrystall inclusions, and an enhance of (100) orientation as a result of titanium diffusion at the platinum grain boundaries and creation of ruthile inclusions. The change in structure with the increase of annealing temperature lead to the decrease of remnant polarization (from 37 µC/cm2 at T = 600 C to 30 µC/cm2 at T = 700 C), increase of dielectric hysteresis loops nonsymmetry, and the decrease of DC leakage (from 106 А at T = 600 C to 109 А at T = 700 C at the voltage higher than the coercive one).