T.Yu. Shumilov1, A.S. Anisimov2, R.Yu. Kazantsev3, A.N. Masyugin4, V.V. Ivanin5

1-3 JSC «SPE «Radiosviaz’» (Krasnoyarsk, Russia)
2,4 Sibirian State University of Sciens and Technology n.a. M.F. Reshetnev (Krasnoyarsk, Russia)
3,5 Sibirian Federal University (Krasnoyarsk, Russia)

1 shtu@krtz.su; 2 anisimov24022002alex@gmail.com; 3kazantsevry.rs@gmail.com; 4 albert.masyugin@mail.ru; 5 v@ivaninv.ru

Ultra-high frequency (UHF) loads are an integral part of radio-electronic systems, ensuring the absorption and dissipation of electromagnetic wave energy. The key problem in their design is to ensure not only high electrical characteristics, but also long-term stability of the resistive element at high specific power [1-3].

Development of a high-power microstrip microwave load that meets modern requirements for mass and size characteristics, specific dissipated power, and, most importantly, predictable long-term stability of parameters based on a physical model of thin-film resistor aging.

A new design for a microstrip microwave load has been developed. The choice of nichrome (NiCr) as the resistive material is justified not only by its specific parameters, but also by its predictable kinetic aging behavior, which obeys the Arrhenius equation [3]. The temperature of the resistive layer of the manufactured microwave load sample at a dissipated power of 100 W and an ambient temperature of +19.3°C did not exceed 71°C. Based on the Arrhenius model, an assessment of long-term stability was carried out for the worst-case scenario at an ambient temperature of +85°C. The calculation shows that even under these conditions, the resistance drift over 15 years will not exceed 1.2%.

The high stability of the developed load parameters allows it to be used in highly reliable components of radio-electronic equipment: precision measuring instruments, protection devices, and base station modules [2, 3, 10].

Shumilov T.Yu., Anisimov A.S., Kazantsev R.Yu., Masyugin A.N., Ivanin V.V. High-frequency microstrip load. Achievements of modern radioelectronics. 2026. V. 80. № 3. P. 57–64. DOI: https://doi.org/10.18127/j20700784-202603-08 [in Russian]

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