V. V. Leonidov1, A. S. Evstigneev2, V. F. Sinkevich3, A.I. Vlasov4

1–3 JSC RPE Pulsar (Moscow, Russia)
1,4 Bauman Moscow State Technical University (Moscow, Russia)
1 leonidov@pulsarnpp.ru, 2 ase@pulsarnpp.ru, 3 sinkevich@pulsarnpp.ru, 4 vlasov@iu4.ru

In modern pulse electronic transmitters and receiver-transmitters, especially those operating in the microwave range, there is a transition from silicon bipolar transistors to transistors based on gallium nitride (GaN). This is due to a higher operating frequency, higher efficiency, increased breakdown voltages, and greater output power. In the previously proposed model of digital automatic gain control for pulse electronic modules, a power amplifier based on a bipolar transistor is considered, the control of which is carried out using a digital device. This article considers the problems that arise when using such a method in amplifiers based on GaN field-effect transistors.

Objective – The aim of the work is to adapt the previously developed method of digital signal generation for pulse electronic modules based on amplifiers based on GaN transistors.

In GaN-based digital envelope shaping amplifiers, the rising and falling edges of the output radio pulse must be formed using a drain-source voltage modulator. The required rising and falling edges shapes are set either using a PWM signal or a digital-to-analog converter (DAC) that directly controls the modulator's power switch. Digital automatic gain control at the top of the radio pulse must be implemented by regulating the gate voltage of the amplifying transistor using a DAC in order to maintain the drain current of the amplifying transistor at a given level. Output power control in a wide range must be implemented by stepwise switching of power supplies, each of which is equipped with its own block of storage capacitors.

The results obtained in the article can be used in the design of modern pulse radio-electronic modules based on GaN-based amplifiers.

Leonidov V.V., Evstigneev A.S., Sinkevich V.F., Vlasov A.I. Features of application of the method of digital signal formation
in pulse radioelectronic modules based on GaN transistors. Achievements of modern radioelectronics. 2025. V. 79. № 9. P. 15–19. DOI: https://doi.org/10.18127/ j20700784-202509-02 [in Russian]

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