А.N. Masyugin – Process Engineer,

JSC «SPE «Radiosvyaz» (Krasnoyarsk)

E-mail: albert.masyugin@mail.ru

F.V. Zelenov – Process Engineer,

JSC «SPE «Radiosvyaz» (Krasnoyarsk)

А.B. Ivanov – Process Engineer,

JSC «SPE «Radiosvyaz» (Krasnoyarsk)

S.О. Konovalov – Process Engineer,

JSC «SPE «Radiosvyaz» (Krasnoyarsk)

А.А. Larkov – Head of Sector,

JSC «SPE «Radiosvyaz» (Krasnoyarsk)

F.А. Baron – Dr.Sc. (Eng.), Chief Technology Officer,

JSC «SPE «Radiosvyaz» (Krasnoyarsk)

А.V. Strezh – Chief Technology,

JSC «SPE «Radiosvyaz» (Krasnoyarsk)

R.G. Galeev – Dr.Sc. (Eng.), General Director,

JSC «SPE «Radiosvyaz» (Krasnoyarsk)

E-mail: kniirs1@mail.krs.ru

The use of thin alumina based ceramic substrates (Al2O3) in manufacturing of hybrid integrated circuits (HIC) and multi-chip modules for RF applications brings up a number of issues: high cost, the complexity of forming through holes, limited size of the substrates due to ceramics brittleness. Alumina substrates typically have poor conductivity (25…30 W / (m·K)) insufficient for heat removal from modern crystals utilized in high power RF monolithic integrated circuits (MMIC). 

One possible solution to the above problems would be to use a metal substrate with high mechanical strength and thermal conductivity. The most promising metal for this role in our opinion is aluminum, due to the possibility of forming low temperature high-quality dielectric coating up to hundreds of microns thick on its surface using electrochemical oxidation of aluminum. Local anodizing of the aluminum surface allows the substrate to be used not only as a supporting base, but also as a functional layer for the power bus and ground. Non-anodized sections of aluminum can serve as a perfect heat sinks to mount the powerful RF components on. 

The goal of this work was to develop the process of selective anodizing of aluminum substrate through photoresist mask and then study the compatibility of the obtained alumina structure with the subsequent higher temperature process steps of forming passive circuits of the HIC topology. In this work we examined some technological challenges of selective anodizing of aluminum substrates and its integration with thin-film technology. We integrated passive component microcircuit directly on top of the aluminum substrate with open metal landing pads providing high heat removal capability for mounting of high power integrated circuit chips.

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