V.L. Oleynik - Junior Research Scientist, Tomsk State University V.V. Kopyev - Junior Research Scientist, Tomsk State University E-mail: dozorx777@gmail.com

In this article show a study of the thermostability of MIS-capacitors based on SiO₂ and Si₃N₄ fabricated by the same process route. We measured the capacitance-voltage characteristics at a frequency of 1 MHz and current-voltage characteristics of capacitors at temperatures from -60 to +125°C. We estimated the temperature coefficient of capacitance for the study materials. It was found that at an identical design of the study capacitors, are more thermostable MIS-capacitors based on SiO₂. From the current-voltage characteristics capacitor based on of Si₃N₄ we estimated operating voltage of ≈ 50 V.

 

1. Volkhin JU.N., Glushhenko V.A., Dubrovskaja A.A., Malinovskijj V.V., Serebrennikov A.A., JAnkovskaja JU.V. Opyt razrabotki i primenenija malogabaritnykh precizionnykh termostabilnykh kondensatorov SVCH s izolirujushhimi slojami iz SiO2 i Ta2O5 dlja sverkhshirokopolosnykh ustrojjstv // Obmen opytom v oblasti sozdanija sverkhshirokopolosnykh radioehlektronnykh sistem: sb. dokl. nauch.-tekhnich. konf. Omsk: Izd-vo OmGTU. 2008.
2. The general properties of Si, Ge, SiGe, SiO2 and Si3N4. URL: http://www.virginiasemi.com/pdf/generalpropertiesSi62002.pdf (data obrashhenija 05.09.2016).
3. Eremina V.E., Ageeva L.M, Maslennikova JA.L. Vyrazhenie dlja rascheta otbrakovochnogo dopuska na emkost kondensatorov s uchetom temperaturnogo faktora // Trudy mezhdunarodnogo simpoziuma «Nadezhnost i kachestvo». Penza: Izd-vo PGU. 2011. T. 2. S. 398-399.
4. Ataseven T., Tataroglu A. Temperature-dependent dielectric properties of Au/Si3N4/n-Si (metal insulator semiconductor) structures // Chin. Phys. B. 2013. V. 22. № 11. P. 117310.