P.G. Bogomolov - Head of Sector, JSC «Scientific Research Institute of the Measuring Device» (Novosibirsk) V.P. Razinkin - Dr.Sc. (Eng.), Professor, Novosibirsk State Technical University (Novosibirsk) V.A. Khrustalev - Dr.Sc. (Eng.), Professor, Novosibirsk State Technical University (Novosibirsk) K.Ya. Aubakirov - Ph.D. (Eng.), Associate Professor, Siberian State University of Technology and Geosystems (Novosibirsk) E-mail: rk_6-41@mail.ru, razinkin_vp@mail.ru, va_khrustalev@ngs.ru

In order to control the parameters output signal of radio transmitting equipment needed broadband microwave high power attenuators. These attenuators as a measuring equipment used in transmission devices of digital television, of radiolocation and communication systems. It is now one of the most promising directions in the development and creation of high-power broadband microwave attenuator is the use of multi-stage and multiple elements structure. They are based on planar film resistors. In the first approximation planar film resistors can be considered as lumped elements. These resistors make in the microwave path along with dissipative losses of parasitic capacitance and inductance. This limits practically achievable operating frequency band. We draw attention to contradictoriness of requirements of simultaneous ensuring a wide band of operating frequencies microwave attenuators and high level of power handling. This is due to necessity of increase the area of film planar resistors. In its turn increase in the area entails an increase parasitic capacitance and inductance. Resolve this discrepancy it becomes possible where multistage constructing of microwave attenuator. In this paper we consider the problem creating a multi-stage microwave attenuators high power, made in the form of agreed symme-trical T-shaped structures located on one or more dielectric substrates. In addition, in this paper we study the frequency properties of multistage microwave high power attenuators different design concept individual cascades. To ensure a quality the interstage matching is necessary to substantiate and choose the structure of the matching circuit and carry out the calculation of its elements. Film Resistors Planar T-shaped structures are designed as of short lengths of micro-strip transmission line with dissipative losses have a small value of the wave impedance. Average resistors symmetrical T-shaped structure formed as a microstrip line segments with a high transmission wave impedance. The study showed the effect of the number of stages and matching networks to the width of the operating frequency band in the multistage of microwave attenuators. In this case, the condition of uniform distribution of power on the cascades. Due to the increase in the number of stages is an expansion of the operating frequency band. At the same time the input power and insertion loss does not change. This is due to the decrease in the area of film planar resistors and as a consequence, their stray reactive parameters. Thus, the proposed method of constructing a multi-stage of microwave attenuators and use matching circuits allows to extend operating frequency band while maintaining an input microwave power.

 

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4. Bogomolov P.G. The broadband microwave attenuator // 16th International conference of young specialists on micro/nanotechnologies and electron devices. EDM\'2015.
5. Rubanovich M.G., Matveev S.J., Khrustalyov V.A., Razinkin V.P., Vasilchic M.J. Calculation of a high frequency rectangular film resistor // Proceedings of the 5th IEEE-Russia Conference - 2005 Microwave Electronics: Measurements, Identification, Applications. MEMIA \'05.
6. Vostrjakov J.V., Rubanovich M.G., Matveev S.J., Khrustalyov V.A., Razinkin V.P. Modular microwave attenuators on power up to 1,2 kW // Proceedings - 9th Russian-Korean International Symposium on Science and Technology. KORUS-2005.
7. Razinkin V.P., Matveev S.J., Khrustalyov V.A., Rubanovich M.G. An analysis of nonlinear effects in semiconductor microwaves devices with a method of functional sequences // Proceedings - 9th Russian-Korean International Symposium on Science and Technology. KORUS-2005.