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Journal Achievements of Modern Radioelectronics №10 for 2015 г.
Article in number:
Design of Q-band power amplifier
Authors:
I.V. Yushkov - Design Engineer 2 kat., JSC «SPE «Radiosviaz» (Krasnoyarsk). E-mail: vanya171993@mail.ru V.A. Shokirov - Design Engineer 3 kat., JSC «SPE «Radiosviaz» (Krasnoyarsk). E-mail: wl-shok@mail.ru A.M. Kovalev - Design Engineer 3 kat., JSC «SPE «Radiosviaz» (Krasnoyarsk). E-mail: artkoval19@gmail.com I.A. Dovbish - Ph.D. (Eng.), Leading Engineer, JSC «SPE «Radiosviaz» (Krasnoyarsk). E-mail: ivandov@yandex.ru
Abstract:
The development of high-power microwave power amplifier considered in this paper. Amplifier is made on the basis of commercial crystal. During the implementation works were composed mathematical models of power amplifier units in the three-dimensional modeling of microwave devices. All units have been set up and optimized to a range of 41...46 GHz. Power amplifier system project was made with the use of pass-through design and simulation of microwave devices. The work is a project, which presents the topol- ogy of the power amplifier and the output parameters of all nodes with the influence of dissipative losses.
Pages: 219-222
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