R.G. Galeev - Ph.D. (Eng.), General Director, JSC «SPE «Radiosviaz» (Krasnoyarsk) А.N. Vtyrin - Dr.Sc. (Phys.-Math.), Deputy Director, Science Kirensky Institute of Physics (Krasnoyarsk) М.Yu. Reushev - Ph.D. (Phys.-Math.), Associate Professor, Institute of Engineering Physic and Radio Electronic, Siberian Federal University (Krasnoyarsk). E-mail: reuqem@mail.ru

It is shown that the direction of current research in the field of photonics development of fiber-optic communication lines are aimed at creating integrated optoelectronic circuits based on quantum structures. In addition, the replacement of a GaAs substrate in the Si substrate in the near future will significantly change the basic elements of optoelectronic devices and give impetus to the develop- ment of new technology monolithic integration of GaAs optoelectronic devices and silicon integrated circuits.

 

1. Portnov EH.L. Opticheskie kabeli svjazi i passivnye komponenty volokonno-opticheskikh linijj svjazi. M.: Gorjachaja linija- Telekom.2007.
2. ZHuravleva L.M., Novozhilov A.V., Kruchinin A.S. Povyshenie ehffektivnosti volokonno-opticheskikh sistem svjazi s pomo- shhju novykh nanostruktur i nanotekhnologijj // Materialy XMezhdunar. nauch.-tekhnich. konf. «Perspektivnye tekhnologii v sredstvakh peredachi informacii». T. 1. Vladimir.: VlGU. 2013. S.136-139.
3. Atomnaja struktura poluprovodnikovykh sistem / Pod red. A.L. Aseeva. Novosibirsk: Izd. SO RAN.2006.
4. Logginov A.S. Kremnievaja fotonika: sovremennoe sostojanie i perspektivy razvitija // VI Mezhdunar. opticheskijj kongress «Optika - XXIvek». Sankt-Peterburg. 18-22 oktjabrja. 2010.