P.G. Bogomolov - Head of Sector, JSC «NPO NIIIP-NZiK» (Novosibirsk). E-mail: rk_6-41@mail.ru

The main directions in the development and design of microwave attenuators are increase of dissipated power, the expansion of op- erating frequency band and miniaturization. At the moment the microwave attenuators made on planar of film resistors on dielectric on the basis of BeO, satisfy most of the requirements listed above. Substrate made of the BeO at the expense of the high thermal conductivity allows to reject more microwave power. On the basis of the use of cascade connection several matched attenuators pro- vided large insertion attenuation. Irregularity in the distribution power occurs when transmission coefficients cascades equal. In this case, the maximum power will be dissipated in the first cascade in comparison with the other cascades. This will entail an increase in the area of film resistors in the first cascade, as a consequence of increased parasitic capacitance, this will affect on the operating frequency band. It follows conclusion that operating frequency band and microwave power dissipation in the multistage attenuators identically linked between themselves.

 

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