Search

Articles 8

1. Design and technology solutions for developing one-time programmable memory Achievements of Modern Radioelectronics, No. 1, 2026 pp. 67-71
2. Dependence analysis of the GaN HEMT parameters on the thickness AlGaN barrier layer by numerical simulation Nanotechnology : the development , application - XXI Century, No. 2, 2016 pp. 37-39
3. Real» insulating properties of an ultrathin silicon oxide Nanotechnology : the development , application - XXI Century, No. 3, 2015 pp. 3-10
4. Real» insulating properties of an ultrathin silicon oxide Radioengineering, No. 8, 2015 pp. 58-65
5. The production development of finish surface processing technology of SiC epi-ready wafers Nanotechnology : the development , application - XXI Century, No. 3, 2014 pp. 33-36
6. The process of applying multi-layer insulation as object of control Information-measuring and Control Systems, No. 9, 2014 pp. 52-57
7. The production development of finish surface processing technology of SiC epi-ready wafers Electromagnetic Waves and Electronic Systems, No. 4, 2014 pp. 24-26
8. Influence of deep levels concentrations of semi-insulating substrate on high-voltage overloads of GaAs MESFETs Radioengineering, No. 5, 2012 pp. 99-102