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Giant magnetoresistance in a many layers heterostructures GaAs/AlGaAs with a wide tunneling barrier


E.N. Morozova, V.A.Volkov, J.-C. Portal

Terahertz plasmons in the grating-gate FET structures with two-dimensional electron channels are investigated. The Ohmic resistance of heterostructures with a low, but wide barrier Al0.1Ga0.9As located between two quantum well GaAs is measured at in-plane magnetic fields B=0…9 T. The resistance increases in factor of 10 at magnetic fields from 0 to 5 T and in factor of 400 at B=0…9 T.
June 24, 2020
May 29, 2020

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