microwave radiation detection
low-temperature plasma flow
Ability of vanadium thin films modification in concentrated flow of low-temperature plasma is shown. Modification can take place due to variation of deposition conditions in direct current magnetron sputtering system. It was found out that interface between differently modified V films detects UHF radiation; sensitivity of experimental samples were up to 40 mV/W in the UHF power range of 60 dB.