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Analysis of metal-oxide semiconductor field-effect transistors parameters by low temperature

Keywords:

A. M. Pilipenko, V. N. Biryukov


The most probable silicon device that can be used at cryogenic temperatures is the silicon metal-oxide semiconductor field-effect transistor (MOSFET). Of course, we can use materials other than silicon, such as GaAs, Ge, etc. However, the silicon MOSFET has a great advantage that the mass production technology established for commercial usage is available for larger-formatted array circuits. For example, in the field of near-infrared astronomy, silicon MOSFETs have already been widely used as readout circuits of near-infrared detector arrays at 15 – 80 K. Additionally, silicon MOSFETs can be operated with low power dissipation, and very suitable as parts of cryogenic readout circuit. In this work an experimental results of p-MOSFET parameters measurement in temperature range 20 – 80 K was shown. To this object five-parameter static model of MOSFET has been proposed. This model takes into account all primary effects in MOSFETs with long-channel. Technique of parameter optimization was developed. Error of parameters measurement substantially smaller than parameter spread in technological process.
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