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Silicon nanopore size Determination bu positron annygilation spectroscopy


Chaplygin Yu.A., Grafutin V.I., Prokopev E.P., Timoshenkov S.P.

On a method of angular distribution of annihilation photons (ADAP) are certain a chemical compound of environment in a annihilation place on external valent electrons atoms of silicon of «wall» of a pores, the sizes and concentration of nanodefects in porous silicon, in the monocrystal silicon plates irradiated by protons.
May 29, 2020

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