S.V. Averin, P.I. Kuznetzov, V.F. Zhitov, N.V. Alkeev, V.M. Kotov, A.A. Dorofeev, N.B. Gladisheva
Selectively-sensitive photodetectors are required for the elaboration of jamproof optical informational systems. Photodiode structures on the base of rectifying metal-semiconductor-metal contacts are most suitable for the development of these detectors. Technology of AlN/AlGaN heterostructures for selectively-sensitive ultraviolet MSM-detectors are described and the results of experimental investigations are presented. MSM-photodetectors have low dark currents while their spectral response demonstrates the ability of using for selectively-sensitive solar-blind detection with maximum sensitivity at 240 nm.