V.N. SEMINOGOV, V.I. SOKOLOV, V.N. GLEBOV, A.M. MALYUTIN,
E.V. TROITSKAYA, S.I. MOLCHANOVA, A.S. AHMANOV,
V.N. PANCHENKO, V.YU. TIMOSHENKO, D.M. ZHIGUNOV,
P.A. FORSH, O.A. SHALYGINA, N.E. MASLOVA, P.K. KASHKAROV
In this study the structural-phase and optical properties of nanocomposites embedded in silicon matrix obtained by thermal deposition of SiOx films with x 1 on silicon, quartz and sapphire substrates were studied. These films were exposed at thermal annealing at different temperatures.
Quantitative characterization methods of structural and phase properties of derived samples by the IR and Raman spectroscopy were developed. These methods allow us to determine a composition (stoichiometry) of the investigated nanocomposite materials, as well as to determine amorphous and crystalline volume fractions of silicon nanoclusters. By the percolation theory the structural-phase transformations and associated with them photoluminescence properties of nanocomposite under increasing the annealing temperature were described. The first and second percolation limits of temperature for amorphous and crystalline silicon nanoclusters were evaluated. When these limits are achieved the significant changes of series physical (optical, electrical, electroluminescent) properties of nanocomposites films are expected, and it is demonstrated by the example of photoluminescence properties.