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Magnetic storage technologies

DOI 10.18127/j20700784-202002-03


V.G. Shadrov – Ph.D. (Phys.-Math.), Leading Research Scientist,

Scientific-Practical Materials Research Centre

A.E. Dmitrieva – Junior Research Scientist,

Scientific-Practical Materials Research Centre

A.V. Boltushkin – Ph.D. (Phys.-Math.), Leading Research Scientist,

Scientific-Practical Materials Research Centre


The increasing need and the need to increase the capacity and recording density of information storage devices and their improvement is accompanied by the approximation of the size of memory cells (bits) to the limit values. The physical limits for the further scaling of devices such as hard magnetic disks and non-volatile memory with random access are the minimum bit volume due to superparamagnetic fluctuations, a large amount of switching current in STT-RAM, thermal damage in phase-inverse memory materials, charge fluctuations in floating devices shutter, etc., as well as restrictions on the working volume of ongoing technological processes.

The avalanche-like growth of information flows, as well as the requirement to increase the performance of computing systems, creates a demand for reliable ultra-fast storage of information.

The purpose of the work is to analyze the main trends in the development of materials and parameters of information storage devices based on magnetic technologies.

Magnetoresistive memory with memory cell switching via spin moment transfer is potentially capable of becoming universal memory and changing the architecture of computers.

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