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Nanosized translucent In2O3 (SnO2) films with metallic conductivity

DOI 10.18127/j22250980-201901-02

Keywords:

S.V. Smirnov – Dr.Sc. (Eng.), Professor, Tomsk State University of Control Systems and Radioelectronics
E-mail: serafim.smirnov@mail.ru
O.N. Minin – Industrial engineer, Research Institute of Semiconductor Devices», Tomsk State University of Control Systems and Radioelectronics
E-mail: dddai@mail.ru
A.A. Chistoedova – Student, Tomsk State University of Control Systems and Radioelectronics,
E-mail: annechist@mail.ru
A.E. Petryuk – Student, Tomsk State University of Control Systems and Radioelectronics
E-mail: p.alyona12@mail.ru


Researches of structure, optical and electric properties of ITO films with metallic conductivity made by magnetron sputtering at a direct current followed by annealing in a nitrogen atmosphere at a temperature of 750 ° C are shown. A fractional crystallization develops at the film surfaces after annealing and it provides kicks developing of the In2O3 crystallization structure on a diffraction pattern but the amorph phase dominates.
The doping and oxygen deficit change the conductivity from semiconductive to metallic (Anderson transition) that was confirmed by the changes of conductivity over a wide temperature range. It is determined that this thermal processing leads to films doping by nitrogen that fills in the oxygen vacancy and makes acceptors levels in the energy gap. A hopping mechanism of conductivity is determined and the carrier concentrarion and mobility are counted. It is shown that the charge carriers in delocalized states gives the main contribution to electrical conductivity.

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May 29, 2020

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