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Software complex for calculating the initial section of the current-voltage characteristics of a resonant-tunneling diode with the possibility of computer statistical experiment

DOI 10.18127/j20700784-201903-03


К.V. Cherkasov – Post-graduate Student, Bauman Moscow State Technical University
S.А. Meshkov – Ph.D. (Eng.), Associate Professor, Bauman Moscow State Technical University
Yu.А. Ivanov – Dr.Sc. (Phys.-Math.), Professor, Bauman Moscow State Technical University
М.О. Makeev – Ph.D. (Eng.), Engineer 1 cat., Bauman Moscow State Technical University

Resonant-tunneling diode (RTD) based on GaAs/AlGaAs multilayer heterostructures is a prospective element of SHF and EHF electronics. Using it as radio signal converters nonlinear element would allow improving their performance indices. According to preliminary research, RTDs made by standard technology is comparable to the best samples of semiconductor heterostructural element base in reliability.
Today’s microwave electronic products (including the solid-state electronics) markets growth speed has caused the microwave elec-tronics production volumes to move to the large-scale (and in some segments – the mass) area. This trend is observed for Russian and abroad markets alike. This requires an estimation of semiconductor elements performance indices technological dispersion estimation, in other words, their reproducibility under existing production technology conditions.
The purpose of this paper is to develop a software tool for RTD current-voltage (I-V) characteristics parameters probabilistic analysis.
Existing RTD I-V characteristics modeling tools have a closed source code, making any functional additions required for computer sta-tistical experiment impossible, or insufficient speed for carrying out a computer statistical experiment. Therefore, an original software package was developed. The package developed allows simulating RTD I-V characteristics basing on diodes heterostructure parameters and to determine I-V characteristics statistical parameters from given RTD design parameters technological errors. RTD I-V cha-racteristics simulation algorithm used in developed package has enough speed to implement computer statistical experiment on its basis.
The Tsu-Esaki formula is used as RTD I-V characteristic calculation mathematical model. Diodes resonant-tunneling structures (RTS) tunneling transparency is calculated by transfer matrix method.
To estimate the simulation accuracy, a comparison between the results of calculating the I-V characteristic of the RTD and the ,experimental data obtained by measuring a batch of 27 diodes was carried out. The maximum current difference between the calculated and experimental I-V characteristic in the 0...0,4 V range is 3,49%.
A module of computer statistical experiment was developed on the RTD I-V characteristic calculation modules basis.
The main RTD technological errors influence on RTD I-V characteristic was studied by using the software package developed. The ,errors studied are: diodes RTS technological errors, ohmic contacts resistance errors, and mesa dimensions errors. The study carried out revealed that maximal contribution to the I-V characteristics variance is made by the diodes RTS technological errors.
Statistical modeling results adequacy evaluation was carried out by comparing simulated current distribution at the RTDs operating point with the one obtained by statistical processing of 30 diodes batch measurement results. Comparison between experimental and simulated current distributions statistical parameters revealed that simulated data is adequate to experiment results.

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