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Temperature and time stability of luminous flux semiconductive light sources with luminiferous coating

Keywords:

S.V. Smirnov – Dr.Sc. (Eng.), Professor, Tomsk State University of Control Systems and Radioelectronics
E-mail: serafim.smirnov@mail.ru
A.A. Chistoedova – Student, Tomsk State University of Control Systems and Radioelectronics
E-mail: annechist@mail.ru


The effect of temperature and operation time on the value of coating luminous flux semiconductive light sources based on GaN-GaInN heterostructures with quantum wells is determined. A crystal on the basis of a GaInN heterostructure generates monochromatic radiation with a wavelength range of 450 nm – 460 nm that is partially transformed to nonmonochromatic radiation in the red-yellow range of the spectrum by means of luminophore. The intensity of luminophore luminescence depends not only on the value of the absorbed radiation flow but also from temperature: the higher the operational temperature, the weaker luminescence. The long-term operation of the coating at high temperature can lead to an irreversible process of decrease in the quantum efficiency of luminophore. To determine the dependence of luminous flux and colour temperature of luminiferous coating on time, the tests were conducted at the temperature of +85 °С during 2000 hours, at the flux density of exciting radiation equal to 100 W/cm2. This experiment confirms determining the influence of temperature dependence of luminophore quantum efficiency on values of the full luminous flux and the correlated colour temperature. It is shown, that the basic contribution to the decrease of its value is made by thermal quenching of luminescence and degradation processes in the aluminiferous coating, caused by the physicochemical interaction of luminophore with silicon-organic ligament.

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June 24, 2020
May 29, 2020

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