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Bandgap reference for CMOS technologies


S.V. Ryzhov – Master, «Design and manufacturing of electronic equipment», Kaluga branch of the Bauman MSTU
V.V. Andreev – Dr.Sc.(Eng.), Professor, «Design and manufacturing of electronic equipment», Kaluga branch of the Bauman MSTU
E.V. Vershinin – Ph.D.(Phys.-Math.), Associate Professor, Kaluga branch of the Bauman MSTU

In this paper, using a spice model of elements for 0.6 μm CMOS technology, a bandgap voltage reference was developed and its electric model was created in Cadence Virtuoso. In this paper, the principle of operation of a reference voltage source based on the width of the bandgap of silicon is considered and the electric principal scheme is described.
In the developed bandgap reference is proposed to use two separate current sources to increase the operating voltage range of the supply voltage. The first is the source of the stabilized current and is used in the circuit to start the circuit at the initial time. The second is the main current source, which is controlled by a two-stage op-amp with reverse negative coupling. The operational amplifier in this scheme to ensure equality of potentials in the branches of the bandgap. It should have a high gain, with a small value of the input differential voltage.
The reference voltage source is developed on the basis of horizontal p-n-p transistors made on the basis of the drain-source regions of MOSFETs within the basic CMOS process with design standards of 0.6 μm with the following parameters: β = 15 at a current of 10 μA; VBE = 700 mV at a current of 10 μA; UCEmax. = 5.5 V. The resistors used in the circuit are made on the basis of a polysilicon film used for obtaining MOS transistor gates. These resistors provide a lower temperature coefficient of resistance compared to diffusion resistors. The parameters of the bandgap were investigated using Cadence Virtuoso. The work includes: the parameters of the developed reference voltage source, the temperature dependence of the output voltage of the bandgap, the dependence of the output voltage of the bandgap on the supply voltage at different temperatures. The operating voltage range is 2.5−6 V. The temperature coefficient of voltage of the voltage reference in the temperature range −60 … 125°C is 7.05 ppm/°C.

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