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New solid-state electronics based on THz splitting and strain of LPE SiGaAsSi crystals energy band gap (Part 1)

Keywords:

A.I. Gordeev – Deputy Director of LLC «Intelsob» (Ulyanovsk)
E-mail: Gordeev.gai@mail.ru
V.E. Voitovich – Dr. Sc. (Eng.), Head of AS «Clifton Electronics» (Tartu, Republic of Estonia)
E-mail: vvoitovitsh@gmail.com
A.V. Zvonarev – Leading Specialist, LLC «Intelsob» (Ulyanovsk)
E-mail: eduhelper@yandex.ru


The paper presents the new physical principles of electromagnetic energy generation, amplification, modulation and transport in i - SiGaAsSi single crystals on the basis of:
multizone conduction theory;
electron - phonon polaroid conductivity.
Part 1 of the paper describes in detail the energy gap splitting effect in i - SiGaAsSi crystals, shows the crystal energy band diagrams with high density of amphoteric hydrogen-like band gap states, which are energetically symmetrical relative to GaAs own electro-chemical potential, and offers the changes into the classic law of mass action and other «non-classic» additions to the band theory.
The second part of the paper includes information regarding new possibilities for implementation of THz electronics on the basis of the domain – phonon polaroids in i - SiGaAsSi single crystals for such applications as a new generation of mobile communications, submillimeter navigation, APPA (active phase antenna array) / Digital APPA, telemetry and a new generation of digital and digital-analog systems.
The paper will deploy the unique possibilities of thermovoltaics («heat pump») and the new generation of uncooled IR – devices based on heterosystems with i - SiGaAsSi - layer for new solutions in such areas as night vision / thermal vision, different gadgets, quantum medicine, new banking, anti-terrorism, intelligent logistics etc.
The newly proposed solid – state electronics acquires special significance in the context of the transition to digital economy.

References:
  1. Zi S.M. Fizika poluprovodnikovy'x priborov. Per. s angl. pod red. A.F. Trutko M.: E'nergiya. 1973.
  2. Ashkinazi G. GaAs Power Devices. Israel. 1999.
  3. Andreev V.M., Dolginov L.M., Tret'yakov D.N. Zhidkostnaya e'pitaksiya v texnologii poluprovodnikovy'x priborov / Pod red. chl.-kor. AN SSSR Zh.I. Alferova. M.: Sov. radio. 1975.
  4. Nashel'skij A.Ya. Monokristally' poluprovodnikov. M.: Metallurgiya. 1978.
  5. Vojtovich V.E., Gordeev A.I. GaAs diody' dlya PFC, SMPS, UPS, IPM, Solar invertors i zameny' sinxronny'x vy'pryamitelej // Silovaya e'lektronika. 2012. № 5.
  6. Vojtovich V.E., Gordeev A.I., Dumanevich A.N. Novaya e'kstremal'naya e'lektronika na osnove LPE i GaAs monokristallov // Sovremennaya e'lektronika». 2014. № 6.
  7. Voitovich Viktor, Rang Toomas, Rang Galina. LPE technology for power GaAs diode structures // Estonian Journal of Engineering. 2010. 16. 1. 11−22.
  8. Dudek Volker (Clifton GmbH, Germany), Kowalsky Jens, Lutz Josef (Chemnitz University of Technology, Germany). GaAs pin Diode Devices and Technology for High Power applications at 600V and above // CS MANTECH International Conference on Compound Semiconductor MANufacturing TECHnology, Denver CO (USA). GaAs Mantech, Incorporated. 2014. P. 397−400.
  9. Alferov Zh.I., Andreev V.M., Korol'kov V.I., Portnoj E.L., Tret'yakov D.N. Fizika e'lektronno-dy'rochny'x perexodov i poluprovodnikovy'x priborov. L.: Nauka. 1969. S. 260−267.
  10. Alferov Zh.I., Andreev V.M., Korol'kov V.I., Portnoj E.L., Tret'yakov D.N. Inzhekczionny'e svojstva geteroperexodov n AlxGa1-xAs – p-GaAs // FTP. 1968. 2. 1016.
  11. Vainshtein S., Yuferev V., Kostamovaara J., Kulagina M., Moilanen H. Significant effect of emitter area on the efficiency, stability and reliability of picosecond switching in a GaAs bipolar transistor structure // IEEE Electr. Dev. 2010. V. 57. P. 733−741.
  12. Gordeev A.I. Perspektivny'e teragerczovy'e polyarizovanny'e informaczionny'e sistemy' (v 2-x chastyax) // Sovremennaya e'lektronika. 2016. № 6 i № 7.
  13. Vojtovich V.E., Gordeev A.I., Zvonarev A.V. Teragerczovaya teplovol'taika na osnove monokristallov LPE i GaAs (SiO)» (v 2 x chastyax) // Sovremennaya e'lektronika. 2017. № 3 i № 4.

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