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Modeling the characteristics of bipolar transistor 2T937 Part II. The frequency characteristics

Keywords:

M.P. Apin – Ph. D. (Econ.), First Deputy General Director, JSC «SPE «Almaz» (Saratov)
E-mail: info@almaz-rpe.ru, almaz-npp@mail.ru
A.G. Balabolin – Head of Department, JSC «SPE «Almaz» (Saratov)
E-mail: titkov-1973@yandex.ru, almaz-npp@mail.ru
A.L. Khvalin – Dr. Sc. (Eng.), Professor, Saratov State University named after N.G. Chernyshevsky


The technique of modeling the frequency characteristics of bipolar transistor 2T937 based on both measured S parameters, and input and output static characteristics is presented. The article presents a technique for modeling the frequency characteristics of a transistor using the example of a 2T937 open-die crystal based on the solution of a multicriteria optimization problem.
The goal of optimizing the parameters of the Hummel-Poon model was simultaneous achievement of all experimentally obtained static and frequency characteristics of the transistor. As a first approximation, the parameters of the Hummel-Poon model obtained in Part I of the paper with the optimization of only static characteristics were used. As a result of solving the multicriteria optimization problem (static and frequency characteristics), the parameters of the Hummel-Poon model of the 2T937 transistor are obtained.
The numerical values of the optimal values of the parameters of the Hummel-Poon model are obtained in the article. The results of calculation of the main characteristics of 2T937 on the created model are compared with the measured characteristics.
It should be noted that, despite the wide frequency range, the maximum value of the coefficient of variation for the amplitude and phase characteristics does not exceed 13%. The proposed model of the transistor 2T937 can be used in modern computer-aided design systems for the development of devices for various purposes.

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