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Analysis of tendencies in the development of chip-resistor, microwave attenuators

Keywords:

S.V. Chizhikov – Master Student, Bauman Moscow State Technical University
E-mail: chigikov95@mail.ru


Resistive thin-film microwave attenuators, made in the chip performance, are widely used in electronic equipment, the receiving and transmitting devices and provide the attenuation of microwave signal. Today there are many versions of the attenuators, which are produced by dozens of the world's largest firms. But every day radiocomponents as the components of electronic equipment are pre-sented to have more technological and functional requirements (increase the nominal level of attenuation, the upper working frequency, the maximum input power, the resistance to adverse environmental factors, accuracy of output parameters). Therefore, a review of the current versions of the attenuators and the analysis of their development tendencies are presented undoubted interest.
The basic scheme, their parameters (the value of the resistances in the input and output lines) and the versions of chip-attenuators were considered.
One of the methods to achieve a high precision of output attenuator settings is a complex technological optimization of its input pa-rameters. The example of optimization of the input attenuator impedance was given.
Comparison of chip-attenuators of different companies, which are the most popular on the market of radio components, was made.
The advantages and the prospects of semi-insulating monocrystalline silicon carbide (SiC) application as a substrate for chip-attenuators and technological difficulties associated with the manufacture of chip-attenuators on SiC were described. The comparison of SiC properties with properties of other materials used as a substrate for attenuators manufacture was made.
From the made analysis of the modern market of radio components it is possible to conclude that the leading country-manufacturer of microwave components, including microwave chip attenuators, is the United States.
It is necessary to develop fundamentally new knowledge and production technologies of millimeter and submillimeter range components to support the development of the high technology industries of our country. One of such technologies may be the production of powerful microwave radio components on silicon carbide substrates, the advantages of which in comparison with the materials were described in this article.

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