Radiotekhnika
Publishing house Radiotekhnika

"Publishing house Radiotekhnika":
scientific and technical literature.
Books and journals of publishing houses: IPRZHR, RS-PRESS, SCIENCE-PRESS


Тел.: +7 (495) 625-9241

 

Probabilistic characteristics of levels of electromagnetic defeat of semiconductor devices and radioelectronic tools

Keywords:

А.А. Volkov – Ph.D. (Eng.), Lecturer, Military Educational-Research Centre of Air Force «Air Force Academy Named After Professor N.E. Zhukovsky and Y.A. Gagarin» (Voronezh)
E-mail: volkov_aa@autorambler.ru


Now an urgent task is the research of the regularities determining levels of electromagnetic influences at which radioelectronic tools fail. It is bound to high extent of miniaturization and integration of the modern element base and, as a result, its high susceptibility to the destructive electromagnetic fields of various nature. Results of experiments show that levels of electromagnetic defeat of semiconductor devices are casual and for their description it is necessary to use probability approach. In the known literature the probability models based on transformation a priori of the given distribution laws of probabilities, as a rule, of normal, power parameters of defeat of semiconductor devices are used. At the same time incoordination of definition range of the normal law with area of possible values of power parameters of defeat (only nonnegative values) is not considered. The work purpose – definition of a type of the distribution law of probabilities of levels of electromagnetic defeat of semiconductor devices and radioelectronic tools. During the research it is established that levels of electromagnetic defeat of semiconductor devices are formed as a result of the work of several random values characterizing substance and a design of a semiconductor crystal. Formation of levels of electromagnetic defeat of the radioelectronic tools having one most vulnerable element happens similarly. A multiplicative contribution to the level of defeat of
radioelectronic funds the same factors which determine the level of defeat of the most vulnerable semiconductor device, and also size, inverse to a transmission factor of an electromagnetic field from a surrounding medium to the most vulnerable semiconductor element, too representing the work of several random values deposit. In the assumption of independence of all random values and insignificance of a contribution of each of them to the common work, the distribution law of levels of electromagnetic defeat is adopted by logarithmic normal. With use of logarithmic normal law approximation of the experimental distribution laws of probabilities of levels of electromagnetic defeat of some semiconductor devices is carried out. Good compliance of theoretical curves to results of an experiment is as a result obtained. Calculation of probability of electromagnetic defeat of radioelectronic means with a nominal receiving antenna at the uniform distribution of the directions of arrival of the striking radiation is carried out. It is established that reception of the striking electromagnetic field on side petals even in case of wide directional diagrams is most probable. Increase in a variation factor of critical levels of the field leads to increase of probability of defeat of radioelectronic means on side petals.

References:
  1. Dobykin V.D., Kuprijanov A.I., Ponomarjov V.G., Shustov L.N. Radiojelektronnaja bor'ba. Silovoe porazhenie radiojelektronnyh sistem. M.: Vuzovskaja kniga. 2007.
  2. Rikets L.U., Bridzhes Dzh. Je., Majletta Dzh. Jelektromagnitnyj impul's i metody zashhity. M.: Atomizdat. 1979.
  3. Antipin V.V., Godovicin V.A., Gromov D.V., Kozhevnikov A.S., Ravaev A.A. Vlijanie moshhnyh impul'snyh mikrovolnovyh pomeh na poluprovodnikovye pribory i integral'nye mikroshemy // Zarubezhnaja radiojelektronika. 1995. № 1. S. 37–53.
  4. Kljuchnik A.V., Solodov A.V. Statisticheskaja model' povrezhdenija cifrovyh integral'nyh mikroshem impul'snym radioizlucheniem // Radiotehnika. 2010. № 2. S. 37–42.
  5. Kljuchnik A.V., Pirogov Ju.A., Solodov A.V. Statistika povrezhdenija SVCh diodov impul'snym radioizlucheniem // Zhurnal radiojelektroniki: jelektronnyj zhurnal. 2010. № 12. URL: http://jre.cplire.ru/jre/dec10/1/text.pdf.
  6. Kljuchnik A.V., Pirogov Ju.A., Solodov A.V. Obratimye otkazy integral'nyh mikroshem v poljah radioizluchenija // Zhurnal radiojelektroniki: jelektronnyj zhurnal. 2013. № 1. URL: http://jre.cplire.ru/jre/jan13/18/text.pdf.
  7. Pirogov Ju.A., Solodov A.V. Povrezhdenija integral'nyh mikroshem v poljah radioizluchenija // Zhurnal radiojelektroniki: jelektronnyj zhurnal. 2013. № 6. URL: http://jre.cplire.ru/jre/jun13/15/text.pdf.
  8. Dobykin V.D. Ocenka statisticheskih harakteristik teplovogo porazhenija poluprovodnikovyh priborov // Radiotehnika. 2004. № 10. S. 38–43.
  9. Meshherjakov S.A. Modelirovanie teplovogo porazhenija diodnyh poluprovodnikovyh struktur poliimpul'snym sverhvysokochastotnym radioizlucheniem // Zhurnal radiojelektroniki: jelektronnyj zhurnal. 2013. № 7. URL: http://jre.cplire.ru/jre/jul13/4/text.pdf.
  10. Ajvazjan S.A., Enjukov I.S., Meshalkin L.D. Prikladnaja statistika: Osnovy modelirovanija i pervichnaja obrabotka dannyh. M.: Finansy i statistika. 1983.
  11. Vadzinskij R.N. Spravochnik po verojatnostnym raspredelenijam. SPb.: Nauka. 2001.
  12. Ventcel' E.S. Teorija verojatnostej. M.: Nauka. Glavnaja redakcija fiziko-matematicheskoj literatury. 1969.
  13. Rakov V.I. Metody approksimacii diagramm napravlennogo dejstvija antenn radiolokacionnyh stancij. L.: VMAKV. 1958.

© Издательство «РАДИОТЕХНИКА», 2004-2017            Тел.: (495) 625-9241                   Designed by [SWAP]Studio