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The construction of field nanotransistors based on phenomena of charge carrier tunneling

Keywords:

V.G. Popov - Dr.Sc. (Phys.-Math.), Senior Research Scientist, Institute of Microelectronics Technology RAS (Cherno-golovka, Moscow Region); Institute of Microelectronics Technology and High Purity Materials Russian Academy of Science


Variants of the use of tunneling effects of charge carriers for reduction of leakage currents at nanotransistor with a using the built-in quantum wells (QW). In its canal and in the shutter were considered. Using QW decries leakage currents in a wide range of gate voltag-es because of the resonance nature of carrier tunneling in the transition between QW. The use of not direct-gap QW significantly reduces leakage currents because of tunneling of charge carriers is weakened by the need for intervalley transfer. The topology of the transistor is given, which allows us to use the described effects.

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May 29, 2020

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