Publishing house Radiotekhnika

"Publishing house Radiotekhnika":
scientific and technical literature.
Books and journals of publishing houses: IPRZHR, RS-PRESS, SCIENCE-PRESS

Тел.: +7 (495) 625-9241


Increasing of GaN HEMT stability to high temperature


S.I. Vidyakin - Post-graduate Student, Bauman Moscow State Technical University; Engineer, Hyperion Ltd. (Moscow)
V.N. Vyuginov - Ph.D. (Phys.-Math.), Director of JSC «Svetlana-Electronpribor» (Saint-Petersburg)
V.G. Tikhomirov - Ph.D. (Eng.), Associate Professor, Saint Petersburg Electrotechnical University «LETI»
V.A. Dobrov - Head of Department, JSC «Svetlana-Electronpribor» (Saint-Petersburg)
V.D. Shashurin - Dr.Sc. (Eng.), Professor, Head of Department «Technology of Instrument Engineering»,  Bauman Moscow State Technical University E-mail:

S.V. Agasieva - Ph.D. (Eng.), Associate Professor, Bauman Moscow State Technical University; Head of Department of Hyperion Ltd. (Moscow)
S.V. Chizhikov - Under-graduate Student, Bauman Moscow State Technical University; Engineer, Hyperion Ltd. (Moscow)

In this article the authors consider the problem of reducing instability CVC GaN HEMT under the influence of external influencing factor, namely elevated temperature. The authors proposed to reduce the instability CVC GaN HEMT under elevated temperature by the introduction of an additional layer with high thermal conductivity. The results of mathematical modeling in the software package Syn-opsys are presented as evidence of the proposed solution. The simulation results confirm a significant reduction of temperature in local zone under the gate and increasing of the temperature stability of the current-voltage characteristics of the transistor. Continued research is to compare CVC of transistors, created by using the proposed optimization and standard technology. The authors analyze of the proposed transistor's CVC and conclude that the result of structural optimization was achieved, and there is a improvement of the temperature stability of its current-voltage characteristics.

  1. V'juginov V.N., Gudkov A.G., Zybin A.A., Shaganov P.A., Vidjakin S.I. Issledovanie chuvstvitel'nosti parametrov maloshumjashhih usilitelej k perepadam temperatury // Radiotehnika. 2016. Vyp. 1. C. 107-109.
  2. V'juginov V.N., Gudkov A.G., Dobrov V.A., Kudrjashova T.Ju., Meshherjakov A.V., Usychenko V.G., Shashurin V.D., Vidjakin S.I., Chizhikov S.V. Metodika i apparatura dlja izmerenija nizkochastotnogo shuma // Radiotehnika. 2016. Vyp. 5. C. 152-154.
  3. Polyakov A.Ya. and other // 6th All-Russian Conf. “Nitrides of gallium, indium and aluminum - structures and devices». Saint-Petersburg. 2008. P. 146.
  4. Vyuginov V.N., Gudkov A.G., Dobrov V.A., Leushin V.Yu., Meshkov S.A., Popov V.V. Account of inheritable characteristics in terms of complex technological optimization of MMIC // 2011 21th Int. Crimean Conf. «Microwave & Telecommunication Yechnology» (CriMiCo’2011). Sevastopol. 2011. P. 709.
  5. Gudkov A.G., Leushin V.Yu., Meshkov S.A., Popov V.V. Account Application of complex technological optimization for monolithic circuits designing // 2008 18th Int. Crimean Conf. «Microwave & Telecommunication Yechnology» (CriMiCo’2008). Sevastopol. 2008. P. 535-536.
  6. Synopsys Inc. Sentaurus Device User Guide. Version E-2010.12. Fremont, California. 2010. P. 95130.
  7. Tikhomirov V., Zemlyakov V., Volkov V., ParnesYa., Vyuginov V., Lundin W., Sakharov A., Zavarin E., Tsatsulnikov A., Cherkashin N., Mizerov M., Ustinov V. // Semiconductors. 2016. V. 50. № 2. Р. 244–248.

© Издательство «РАДИОТЕХНИКА», 2004-2017            Тел.: (495) 625-9241                   Designed by [SWAP]Studio