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The concept of biosensor based on HEMT

Keywords:

S.V. Agasieva - Ph.D. (Eng.), Associate Professor, Bauman Moscow State Technical University; Head of Department of Hyperion Ltd. (Moscow)
V.N. Vyuginov - Ph.D. (Phys.-Math.), Director of JSC «Svetlana-Electronpribor» (Saint-Petersburg )
V.V. Zherdeva - Ph.D. (Biol.), Associate Professor, Russian Medical Academy of Postgraduate Education Studies (Moscow)
E-mail: zherdeva.victoria@gmail.com
A.A. Zybin - Head of Laboratory, JSC «Svetlana-Electronpribor» (Saint-Petersburg)
V.G. Tikhomirov - Ph.D. (Eng.), Associate Professor, Saint Petersburg Electrotechnical University «LETI»


Drain-source current change at a constant voltage between a drain and a source is a detected signal for biosensors based on HEMT tran-sistors. The main demands to transistors, used for creation of invasive biosensors are defined: stability at physiological concentration of salts, biocompatibility, sensitivity. Nitrides of group III are chosen as a basic material for biosensor realization. Nitrides of group III is a wide application in electronics. They have a unique combination of physical characteristics (varied from 1,9 to 6,2 эВ width of the forbid-den band in ternary compound, high heat conductivity, chemical and thermal stability, existence spontaneous and pyezopolyarization, etc.). The heterostructure with one AlGaN/GaN heterojunction is chosen for a biosensor realization. There is a two-dimensional electronic gas at heterointerface due to a pyezoalloyage. The hetero-structure is grown up by a method of a gas-phase epitaxy using decomposition of organometallic compound with a low pressure on a sapphire substrate. AlGaN/GaN HEMT without a gate is chosen as constructive realization of a biosensor. This design is technological. Since the precision operations connected with formation of barrier metallization are excluded from technological process of its production. Also the giving scheme of supply voltage on the transistor becomes simpler.

References:
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