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The effect of low temperature annealing on the low-frequency and microwave transistors on the parameters of heterostructures AlGaN / GaN

Keywords:

A.S. Evseenkov - Post-graduate Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana Elektropribor» E-mail: as.evseenkov@gmail.com V.E. Zemlyakov - Ph.D. (Eng.), Associate Professor, National Research University of Electronic Technology – MIET (Moscow) E-mail: vzml@rambler.ru V.G. Tikhomirov - Ph.D. (Eng.), Associate Professor, Saint Petersburg Electrotechnical University «LETI» E-mail: v11111@yandex.ru S.A. Tarasov - Ph.D. (Phus.-Math.), Associate Professor, Saint Petersburg Electrotechnical University «LETI» E-mail: SATarasov@mail.ru Y.M. Parnes - Post-graduate Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana-Elektronpribor» E-mail: jmparnes@gmail.com N.K. Balovnev - Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana-Elektronpribor» E-mail: nikolay5556@gmail.com E.E. Kurteev - Student, Saint Petersburg Electrotechnical University «LETI»; Engineer, JSC «Svetlana-Elektronpribor» E-mail: kusticky@gmail.com A.N. Lubyanoy - Engineer, JSC «Svetlana-Elektronpribor» E-mail: andrey.lubyanoy@gmail.com


When using transistors based on nitrides in the microwave modes large signal there is a problem changing the characteristics - can increase leakage current, breakdown voltage change, saturation current, reduced output power. However, even on devices fabricated on a silicon carbide substrate has a variation of parameters, and change the low-frequency and microwave characteristics may occur unevenly from transistor to transistor. The standard for the modeling of changes in performance over time is the study of semiconductor devices at high ambient temperatures. This may occur as a degradation process instrumentation and stabilization or even improvement of the low-frequency and microwave parameters of semiconductor devices. In this paper we study the effect of low temperature annealing on the low-frequency and microwave parameters of transistors on a heteroepitaxial structures of AlGaN / GaN in order to determine the optimal annealing conditions to stabilize their performance. The effect of low temperature annealing on the low-frequency and microwave transistors on the parameters of heterostructuresAlGaN / GaN structures. Annealing was carried out in the temperature range from 180 to 250 degrees Celsius, at a different time delay to 2 h.Results strongly influenced by low-temperature annealing on the parameters of the direct branch of the current-voltage characteristics, of the gate - drain leakage, currents of current-voltage characteristics of the gate – drain and output of the microwave - power. In the control group,which was subjected to thermal stabilization with 225 °С transistors have observed a slight increase in current, power improvement in the microwave, as well as reduced degradation characteristics of transistors when operating in RF mode. The average increase in the saturation current was from 165 to 174 mA. Microwave degradation subgate leakage current reduced by an order of the control group, which was held thermal stabilization. In the control group, affected by low temperature annealing at 225 °С observed stabilization and increase the Schottky barrier, and there is a clear effect of stabilizing the microwave power transistors. If exposure to temperature output ranged from 24 to 31 dBm, after stabilization of the whole sample began to give power of 32 dBm. Most likely, the stabilization occurs as a result of the removal of small defects below the gate, resulting ion etching gate di-electric and interface defects on the border of Si3N4 / AlGaN interface. This mode can be used to stabilize the transistor parameters based nitrides in the same batch.

References:

 

  1. Faraclas E., Anwar A. AlGaN/GaN HEMTs: experiment and simulation of DC characteristics // Solid-State Electron. 2006. V. 50. № 6. R. 1051–1056.
  2. Byung-Jae Kim, et al. Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors // J. Vac. Sci. Technol. 2015. V. B 33, 031204.
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  4. Tikhomirov V., Zemlyakov V., Volkov V., Parnes Ya., Vyuginov V., Lundin W., Sakharov A., Zavarin E., Tsatsulnikov A., Cherkashin N., Mizerov M., Ustinov V. // Semiconductors. 2016. V. 50. № 2. R. 244–248.

 

June 24, 2020
May 29, 2020

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