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Analysis of the low-resistance contact of the system titanium-nickel with strongly doped silicon of N type

Keywords:

A.V. Skiper – Senior Lecturer, Kaluga branch of the Bauman MSTU. E-mail: skiper60@yandex.ru N.S. Lazarev – Student, Kaluga branch of the Bauman MSTU. E-mail: lazarevnikolay05@gmail.com V.S. Zaionchkovskiy – Ph. D. (Phys.-Math.), Associate Professor, Kaluga branch of the Bauman MSTU. E-mail: vz48@post.ru I.A. Rastorguyev – Student, Kaluga branch of the Bauman MSTU. E-mail: rastorguew94@gmail.com


Ohmic contact is one of the most common and important for electronic devices. This article discusses the system is an alternative to aluminum - Ti-Ni. The technological features of deposition of these metals. Shows current-voltage characteristics of the contacts after annealing at various temperatures. Current-voltage characteristics after isochronous photonic annealing at temperatures ranging from 450° C to 650° C have an unusual shape - of the two straight line sections with different slope to the voltage axis passing smoothly into one another. This can be explained by the fact that there is a formation of two silicon silicide phases (TiSi2), with different values of resistivity. The minimum value of resistivity data contacts occurs without any annealing or after annealing at 700° C.
References:

 

  1. Zi S. Fizika poluprovodnikovykh priborov: V 2-kh knigakh. Kn. 1. M.: Mir. 1984. 456 s.
  2. Yoon S., Jeon H. A study on the change in phase transition temperature of TiSi2 by adding the Zr element on different Si substrates // J. Korean Phys. Soc. 1999. V. 34. № 4. P. 365−370.
  3. Clevenger L.A. et al. Study of C49-TiSi2 and C54-TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealing // J. Appl. Phys. 1994. V. 76. № 12. P. 7874−7881.

 

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