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Сomponents of the radiation-hardened analog microcircuits, using the temperature dependences of the p n junctions

Keywords:

O.V. Dvornikov – Dr. Sc. (Eng.), Professor, Main Research Scientist, PLC «Minsk Research Instrument-Making Institute». E-mail: Oleg_dvornikov@tut.by V.A. Chekhovsky – Head of Laboratory, Research Institute for Nuclear Problems of Belarusian State University (Minsk). E-mail: vtchek@hep.by V.L. Dyatlov – Junior Research Scientist, PLC «Minsk Research Instrument-Making Institute». E-mail: nitnelaff@gmail.com N.N. Prokopenko – Dr. Sc. (Eng.), Professor, Head of Department «Information Systems and Radio Engineering», Don State Technical University (Rostov-on-Don). E-mail: prokopenko@sssu.ru


The aim of the article is to consider and to carry out the field research of the new circuit solutions of the base functional nodes of the analog microelectronics – the references (R), the continuously operating voltage regulators (VR) and the temperature sensors with the current output (TS), realized on the radiation-hardened FETs and the complementary bipolar junction transistors (OJSC «Integral», Minsk). The measurement results of the test microcircuits allowed setting the main parameters of the created typical functional nodes. The output voltage of the R is 1.221 V, depending on the temperature and the supply voltage it changes for 49 µV /°C, 0.63 mV/V. The output voltage of the VR is 5.95 V and it changes for 292 µV /°C, 20 mV/V. The parameters of the temperature sensor are the following: the output current is 54.6 µA at T = 30°C, the change of the output current is 2.99 µA/°C. The absence of the created components of the thin-film and tunable resistors in the construction provides their compliance with the typical operation-routing sequences of the complementary bipolar integrated circuits production.
References:

 

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