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Method and equipment for measuring of low-frequency noise

Keywords:

V.N. Vyuginov – Ph. D. (Phys.-Math.), Director of Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: vyuginov@svetlana-ep.ru A.G. Gudkov – Dr. Sc. (Eng.), Professor, Bauman Moscow State Technical University. E-mail: profgudkov@gmail.com V.A. Dobrov – Head of Department, Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: dobrov@svetlana-ep.ru T.Yu. Kudryashova – Senior Lecturer, Peter The Great St.Petersburg Polytechnic University. E-mail: vttania@list.ru A.V. Mescheryakov – Ph. D. (Eng.), Associate Professor, Peter The Great St.Petersburg Polytechnic University. E-mail: vttania@list.ru V.G. Usychenko – Dr. Sc. (Phys.-Math.), Professor, Peter The Great St.Petersburg Polytechnic University. E-mail: usychenko@rphf.spbstu.ru V.D. Shashurin – Dr. Sc. (Eng.), Professor, Bauman Moscow State Technical University. E-mail: schashurin@bmstu.ru S.I. Vidyakin – Post-graduate Student, Bauman Moscow State Technical University. E-mail: bmsturl@gmail.com S.V. Chizhikov – Assistant, Bauman Moscow State Technical University. E-mail: chigikov95@mail.ru


The main operating principles of stand for the low-frequency noise measuring of semiconductor devices are described. The structural scheme of device for the low-frequency noise measuring of semiconductor devices is described. The method, allowing to carry out a express-analysis of low frequency noise transistors, lying on the surface of the semiconductor wafer, and to evaluate the quality of material used for production of semiconductor devices, is suggested. The energy specters of current drain noise of GaN transistor on the SiC substrate and conclusion about the quality of GaN-material used for production of transistor are presented.
References:

 

  1. ZHigalskijj G.P. Fluktuacii i shumy v ehlektronnykh priborakh. M.: Fizmatlit. 2012. 512 s.
  2. Levinshtein M.E., Rumyntsev S.L., Tauk R., et al. Low frequency noise in InAlAs/InGaAs modulation doped field effect transistor with 50-nm gate length // Journal of Applied Physics. 2007. 102. 064506.
  3. Rumyntsev S.L., Pala N., Shur M.S., et al. Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors // Semiconductor Science and Technology. 2002. № 17. P. 476−479.
  4. Shmidt N.M., Levinshtein M.E., Lundin W.V., et al. Low-frequency noise in GaN- epilayers with different degree of order of the mosaic structure // Semiconductors. 2004. № 38 P. 1036.

 

 

June 24, 2020
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